RTF025N03TL
- Mfr.Part #
- RTF025N03TL
- Manufacturer
- ROHM Semiconductor
- Package / Case
- 3-SMD, Flat Lead
- Datasheet
- Download
- Description
- MOSFET N-CH 30V 2.5A TUMT3
- Stock
- 11,319
- In Stock :
- 11,319
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- Manufacturer :
- ROHM Semiconductor
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Operating Mode :
- ENHANCEMENT MODE
- Time@Peak Reflow Temperature-Max (s) :
- 10
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Input Capacitance (Ciss) (Max) @ Vds :
- 270pF @ 10V
- Terminal Position :
- Dual
- Package / Case :
- 3-SMD, Flat Lead
- Number of Terminations :
- 3
- Current Rating :
- 2.5A
- Transistor Element Material :
- SILICON
- Drive Voltage (Max Rds On,Min Rds On) :
- 2.5V 4.5V
- Gate to Source Voltage (Vgs) :
- 12V
- Mount :
- Surface Mount
- Fall Time (Typ) :
- 15 ns
- Packaging :
- Tape and Reel (TR)
- Threshold Voltage :
- 1.5V
- Pbfree Code :
- yes
- Turn-Off Delay Time :
- 27 ns
- Gate Charge (Qg) (Max) @ Vgs :
- 5.2nC @ 4.5V
- Resistance :
- 67mOhm
- Continuous Drain Current (ID) :
- 2.5A
- Transistor Application :
- SWITCHING
- Mounting Type :
- Surface Mount
- Vgs(th) (Max) @ Id :
- 1.5V @ 1mA
- RoHS Status :
- ROHS3 Compliant
- Element Configuration :
- Single
- Terminal Finish :
- Tin/Copper (Sn/Cu)
- Published :
- 2007
- Rise Time :
- 15ns
- Operating Temperature :
- 150°C TJ
- Pin Count :
- 3
- Factory Lead Time :
- 16 Weeks
- Lead Free :
- Lead Free
- Rds On (Max) @ Id, Vgs :
- 67m Ω @ 2.5A, 4.5V
- Power Dissipation :
- 800mW
- Number of Pins :
- 3
- JESD-609 Code :
- e2
- Voltage - Rated DC :
- 30V
- Peak Reflow Temperature (Cel) :
- 260
- Radiation Hardening :
- No
- Drain to Source Breakdown Voltage :
- 30V
- REACH SVHC :
- No SVHC
- Current - Continuous Drain (Id) @ 25°C :
- 2.5A Ta
- Turn On Delay Time :
- 8 ns
- FET Type :
- N-Channel
- ECCN Code :
- EAR99
- Power Dissipation-Max :
- 800mW Ta
- Number of Elements :
- 1
- Datasheets
- RTF025N03TL

N-Channel Tape & Reel (TR) 67m Ω @ 2.5A, 4.5V 270pF @ 10V 5.2nC @ 4.5V 3-SMD, Flat Lead
RTF025N03TL Overview
CI refers to the capacitance between two input terminals on an op amp with either input grounded, and this device's maximum input capacitance is 270pF @ 10V.In this device, the drain current (ID) is equal to the continuous current transistor can conduct.This device has 30V drain-to-source breakdown voltage, where VDS corresponds to the ID at which a specified value of ID flows and VGS equals 30V.As a result of its turn-off delay time, which is 27 ns, the device has taken time to charge its input capacitance before drain current conduction begins.Input capacitance charge delays drain current conduction until the time it takes to charge input capacitance reaches 8 ns.Gate-source voltages (VGS) are voltages that fall across the gate-source terminal of FET transistors. VGS is sometimes 12VV.The threshold voltage is the point at which an electrical device activates any one of its operations, which for this transistor is 1.5V.In addition to reducing power consumption, this device uses drive voltage (2.5V 4.5V).
RTF025N03TL Features
a continuous drain current (ID) of 2.5A
a drain-to-source breakdown voltage of 30V voltage
the turn-off delay time is 27 ns
a threshold voltage of 1.5V
RTF025N03TL Applications
There are a lot of ROHM Semiconductor
RTF025N03TL applications of single MOSFETs transistors.
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
- PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
- Lighting, Server, Telecom and UPS.
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