RTF025N03TL

Manufacturer :

ROHM Semiconductor

Product Category :

Transistors - FETs, MOSFETs - Single

Current - Continuous Drain (Id) @ 25°C :

2.5A Ta

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Rise Time :

15ns

ECCN Code :

EAR99

RoHS Status :

ROHS3 Compliant

Drain to Source Breakdown Voltage :

30V

Radiation Hardening :

No

Published :

2007

Turn-Off Delay Time :

27 ns

Resistance :

67mOhm

Threshold Voltage :

1.5V

Operating Temperature :

150°C TJ

Packaging :

Tape and Reel (TR)

Lead Free :

Lead Free

Pin Count :

3

Element Configuration :

Single

Number of Elements :

1

Power Dissipation :

800mW

Mount :

Surface Mount

Time@Peak Reflow Temperature-Max (s) :

10

Transistor Application :

SWITCHING

Continuous Drain Current (ID) :

2.5A

FET Type :

N-Channel

Power Dissipation-Max :

800mW Ta

Transistor Element Material :

SILICON

Terminal Position :

Dual

JESD-609 Code :

e2

Fall Time (Typ) :

15 ns

Number of Terminations :

3

Gate to Source Voltage (Vgs) :

12V

Voltage - Rated DC :

30V

Current Rating :

2.5A

Factory Lead Time :

16 Weeks

Terminal Finish :

Tin/Copper (Sn/Cu)

Mounting Type :

Surface Mount

Gate Charge (Qg) (Max) @ Vgs :

5.2nC @ 4.5V

Operating Mode :

ENHANCEMENT MODE

Turn On Delay Time :

8 ns

Number of Pins :

3

Vgs(th) (Max) @ Id :

1.5V @ 1mA

REACH SVHC :

No SVHC

Rds On (Max) @ Id, Vgs :

67m Ω @ 2.5A, 4.5V

Input Capacitance (Ciss) (Max) @ Vds :

270pF @ 10V

Package / Case :

3-SMD, Flat Lead

Peak Reflow Temperature (Cel) :

260

Drive Voltage (Max Rds On,Min Rds On) :

2.5V 4.5V

Pbfree Code :

yes