RTF020P02TL

Manufacturer :

ROHM Semiconductor

Product Category :

Transistors - FETs, MOSFETs - Single

Nominal Vgs :

2 V

Drain to Source Breakdown Voltage :

-30V

Threshold Voltage :

2V

Published :

2007

Time@Peak Reflow Temperature-Max (s) :

10

Peak Reflow Temperature (Cel) :

260

Operating Temperature :

150°C TJ

Turn On Delay Time :

12 ns

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Power Dissipation-Max :

800mW Ta

Turn-Off Delay Time :

40 ns

Current Rating :

-2A

Number of Elements :

1

Radiation Hardening :

No

Drive Voltage (Max Rds On,Min Rds On) :

2.5V 4.5V

Input Capacitance (Ciss) (Max) @ Vds :

640pF @ 10V

Drain Current-Max (Abs) (ID) :

2A

Rise Time :

15ns

Number of Terminations :

3

Current - Continuous Drain (Id) @ 25°C :

2A Ta

JESD-609 Code :

e2

Voltage - Rated DC :

-20V

Pin Count :

3

REACH SVHC :

No SVHC

Mount :

Surface Mount

Transistor Element Material :

SILICON

Continuous Drain Current (ID) :

2A

Packaging :

Tape and Reel (TR)

Gate to Source Voltage (Vgs) :

12V

Dual Supply Voltage :

20V

Pbfree Code :

yes

Vgs(th) (Max) @ Id :

2V @ 1mA

Lead Free :

Lead Free

Vgs (Max) :

±12V

ECCN Code :

EAR99

Gate Charge (Qg) (Max) @ Vgs :

7nC @ 4.5V

Mounting Type :

Surface Mount

Terminal Finish :

TIN COPPER

Number of Pins :

3

Fall Time (Typ) :

12 ns

FET Type :

P-Channel

Power Dissipation :

800mW

Rds On (Max) @ Id, Vgs :

85m Ω @ 2A, 4.5V

Package / Case :

3-SMD, Flat Lead

Resistance :

165mOhm

RoHS Status :

ROHS3 Compliant

Operating Mode :

ENHANCEMENT MODE

Element Configuration :

Single

Termination :

SMD/SMT

Transistor Application :

SWITCHING

Terminal Position :

Dual