RTF016N05TL

Manufacturer :

ROHM Semiconductor

Product Category :

Transistors - FETs, MOSFETs - Single

Operating Mode :

ENHANCEMENT MODE

Power Dissipation-Max :

320mW Ta

Configuration :

SINGLE WITH BUILT-IN DIODE

Radiation Hardening :

No

Mounting Type :

Surface Mount

Operating Temperature :

150°C TJ

Continuous Drain Current (ID) :

1.6A

Drive Voltage (Max Rds On,Min Rds On) :

2.5V 4.5V

FET Type :

N-Channel

Drain-source On Resistance-Max :

0.28Ohm

Number of Pins :

3

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Rise Time :

14ns

Terminal Position :

Dual

DS Breakdown Voltage-Min :

45V

Vgs(th) (Max) @ Id :

1.5V @ 1mA

Number of Terminations :

3

ECCN Code :

EAR99

Fall Time (Typ) :

10 ns

Input Capacitance (Ciss) (Max) @ Vds :

150pF @ 10V

Mount :

Surface Mount

Lead Free :

Lead Free

Rds On (Max) @ Id, Vgs :

190m Ω @ 1.6A, 4.5V

Pin Count :

3

Package / Case :

3-SMD, Flat Lead

Current - Continuous Drain (Id) @ 25°C :

1.6A Ta

Packaging :

Cut Tape (CT)

Gate to Source Voltage (Vgs) :

12V

Factory Lead Time :

16 Weeks

Transistor Element Material :

SILICON

Drain to Source Voltage (Vdss) :

45V

Turn-Off Delay Time :

16 ns

Gate Charge (Qg) (Max) @ Vgs :

2.3nC @ 4.5V

Number of Elements :

1

Vgs (Max) :

±12V

Transistor Application :

SWITCHING

Turn On Delay Time :

8 ns

Published :

2012

RoHS Status :

ROHS3 Compliant