RTF010P02TL

Manufacturer :

ROHM Semiconductor

Product Category :

Transistors - FETs, MOSFETs - Single

Terminal Finish :

TIN COPPER

Package / Case :

3-SMD, Flat Lead

JESD-609 Code :

e2

Peak Reflow Temperature (Cel) :

260

Turn-Off Delay Time :

25 ns

Drain Current-Max (Abs) (ID) :

1A

Resistance :

390mOhm

Published :

2004

Pin Count :

3

Lead Free :

Lead Free

Current - Continuous Drain (Id) @ 25°C :

1A Ta

Gate to Source Voltage (Vgs) :

12V

Fall Time (Typ) :

8 ns

Mounting Type :

Surface Mount

Number of Terminations :

3

Turn On Delay Time :

9 ns

Rds On (Max) @ Id, Vgs :

390m Ω @ 1A, 4.5V

Operating Temperature :

150°C TJ

Input Capacitance (Ciss) (Max) @ Vds :

150pF @ 10V

Current Rating :

-1A

Power Dissipation-Max :

800mW Ta

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Element Configuration :

Single

ECCN Code :

EAR99

Time@Peak Reflow Temperature-Max (s) :

10

FET Type :

P-Channel

Vgs (Max) :

±12V

Rise Time :

8ns

RoHS Status :

ROHS3 Compliant

Mount :

Surface Mount

Terminal Position :

Dual

Gate Charge (Qg) (Max) @ Vgs :

2.1nC @ 4.5V

Packaging :

Tape and Reel (TR)

Transistor Application :

SWITCHING

Continuous Drain Current (ID) :

1A

Drive Voltage (Max Rds On,Min Rds On) :

2.5V 4.5V

Operating Mode :

ENHANCEMENT MODE

Radiation Hardening :

No

Drain to Source Voltage (Vdss) :

20V

Transistor Element Material :

SILICON

Voltage - Rated DC :

-20V

Drain to Source Breakdown Voltage :

-20V

Number of Elements :

1

Pbfree Code :

yes

Power Dissipation :

800mW

Vgs(th) (Max) @ Id :

2V @ 1mA

Number of Pins :

3