RSS070P05FRATB

Manufacturer :

ROHM Semiconductor

Product Category :

Transistors - FETs, MOSFETs - Single

Published :

2017

Drain to Source Voltage (Vdss) :

45V

Current - Continuous Drain (Id) @ 25°C :

7A Ta

Vgs(th) (Max) @ Id :

2.5V @ 1mA

JESD-30 Code :

R-PDSO-G8

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Power Dissipation-Max :

2W Ta

Drain Current-Max (Abs) (ID) :

7A

DS Breakdown Voltage-Min :

45V

Factory Lead Time :

20 Weeks

FET Type :

P-Channel

Operating Temperature :

150°C TJ

Number of Elements :

1

Input Capacitance (Ciss) (Max) @ Vds :

4100pF @ 10V

Drain-source On Resistance-Max :

0.039Ohm

Gate Charge (Qg) (Max) @ Vgs :

47.6nC @ 5V

Pulsed Drain Current-Max (IDM) :

28A

Vgs (Max) :

±20V

Rds On (Max) @ Id, Vgs :

27m Ω @ 7A, 10V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Package / Case :

8-SOIC (0.154, 3.90mm Width)

ECCN Code :

EAR99

RoHS Status :

ROHS3 Compliant

Surface Mount :

yes

Mounting Type :

Surface Mount

Terminal Position :

Dual

Operating Mode :

ENHANCEMENT MODE

Number of Terminations :

8

Transistor Element Material :

SILICON

Series :

Automotive, AEC-Q101

Drive Voltage (Max Rds On,Min Rds On) :

4V 10V

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Terminal Form :

Gull wing

Configuration :

SINGLE WITH BUILT-IN DIODE

Transistor Application :

SWITCHING

Packaging :

Cut Tape (CT)