RSS050P03FU6TB
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- Mfr.Part #
- RSS050P03FU6TB
- Manufacturer
- ROHM Semiconductor
- Package / Case
- 8-SOIC (0.154, 3.90mm Width)
- Datasheet
- Download
- Description
- MOSFET P-CH 30V 5A 8SOP
- Stock
- 8,036
- In Stock ：
- 8,036
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- Manufacturer :
- ROHM Semiconductor
- Product Category :
- Transistors - FETs, MOSFETs - Single
- REACH SVHC :
- No SVHC
- Drain to Source Breakdown Voltage :
- -30V
- Input Capacitance (Ciss) (Max) @ Vds :
- 1200pF @ 10V
- Mounting Type :
- Surface Mount
- Package / Case :
- 8-SOIC (0.154, 3.90mm Width)
- Turn-Off Delay Time :
- 70 ns
- Lead Free :
- Lead Free
- Operating Temperature :
- 150°C TJ
- Continuous Drain Current (ID) :
- 5A
- Power Dissipation-Max :
- 2W Ta
- Threshold Voltage :
- -2.5V
- Turn On Delay Time :
- 12 ns
- Rds On (Max) @ Id, Vgs :
- 42m Ω @ 5A, 10V
- Fall Time (Typ) :
- 35 ns
- Radiation Hardening :
- No
- Vgs(th) (Max) @ Id :
- 2.5V @ 1mA
- Drain to Source Voltage (Vdss) :
- 30V
- Drain Current-Max (Abs) (ID) :
- 5A
- Power Dissipation :
- 2W
- Configuration :
- Single
- Number of Pins :
- 8
- ECCN Code :
- EAR99
- Mount :
- Surface Mount
- Pbfree Code :
- yes
- Gate Charge (Qg) (Max) @ Vgs :
- 13nC @ 5V
- RoHS Status :
- ROHS3 Compliant
- Current - Continuous Drain (Id) @ 25°C :
- 5A Ta
- Drive Voltage (Max Rds On,Min Rds On) :
- 4V 10V
- Vgs (Max) :
- ±20V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Packaging :
- Tape and Reel (TR)
- Rise Time :
- 25ns
- Gate to Source Voltage (Vgs) :
- 20V
- FET Type :
- P-Channel
- Published :
- 2004
- Datasheets
- RSS050P03FU6TB
P-Channel Tape & Reel (TR) 42m Ω @ 5A, 10V ±20V 1200pF @ 10V 13nC @ 5V 30V 8-SOIC (0.154, 3.90mm Width)
RSS050P03FU6TB Overview
An op amp's input capacitance is defined as the capacitance between both of its input terminals with either input grounded, and 1200pF @ 10V is its maximum input capacitance.The drain current is the maximum continuous current the device can conduct, and this device has 5A continuous drain current (ID).A drainage-to-source breakdown voltage corresponds to the voltage at which a specified value of ID flows, where VGS is -30V, and this device has a drainage-to-source breakdown voltage of -30VV.Drain current refers to the maximum continuous current a device can conduct, and it is 5A.Input capacitance must be charged before drain current conduction can begin, so the turn-off delay time is 70 ns.Before drain current conduction begins, the device's input capacitance must be charged, so the delay time is 12 ns.An FET transistor's gate-source voltage, VGS, indicates how much voltage is applied across the transistor's gate-source terminal and it can range from 20V to 1.In this case, the threshold voltage of the transistor is -2.5V, which means that it will not activate any of its functions when its threshold voltage reaches -2.5V.For this transistor to work, a voltage 30V is required between drain and source (Vdss).Using drive voltage (4V 10V), this device contributes to a reduction in overall power consumption.
RSS050P03FU6TB Features
a continuous drain current (ID) of 5A
a drain-to-source breakdown voltage of -30V voltage
the turn-off delay time is 70 ns
a threshold voltage of -2.5V
a 30V drain to source voltage (Vdss)
RSS050P03FU6TB Applications
There are a lot of ROHM Semiconductor
RSS050P03FU6TB applications of single MOSFETs transistors.
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
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