RSS065N03TB
- Mfr.Part #
- RSS065N03TB
- Manufacturer
- ROHM Semiconductor
- Package / Case
- 8-SOIC (0.154, 3.90mm Width)
- Datasheet
- Download
- Description
- MOSFET N-CH 30V 6.5A 8SOP
- Stock
- 162,186
- In Stock :
- 162,186
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- Manufacturer :
- ROHM Semiconductor
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Number of Pins :
- 8
- Number of Terminations :
- 8
- Current Rating :
- 6.5A
- Factory Lead Time :
- 40 Weeks
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Time@Peak Reflow Temperature-Max (s) :
- 10
- FET Type :
- N-Channel
- Number of Elements :
- 1
- Power Dissipation :
- 2W
- Peak Reflow Temperature (Cel) :
- 260
- Terminal Finish :
- TIN COPPER
- Gate to Source Voltage (Vgs) :
- 20V
- Lead Free :
- Lead Free
- Drive Voltage (Max Rds On,Min Rds On) :
- 4V 10V
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- Operating Temperature :
- 150°C TJ
- Current - Continuous Drain (Id) @ 25°C :
- 6.5A Ta
- Transistor Application :
- SWITCHING
- Mount :
- Surface Mount
- ECCN Code :
- EAR99
- Package / Case :
- 8-SOIC (0.154, 3.90mm Width)
- Power Dissipation-Max :
- 2W Ta
- Mounting Type :
- Surface Mount
- Vgs(th) (Max) @ Id :
- 2.5V @ 1mA
- Rise Time :
- 8ns
- JESD-609 Code :
- e2
- Turn-Off Delay Time :
- 31 ns
- Continuous Drain Current (ID) :
- 6.5A
- Vgs (Max) :
- ±20V
- Terminal Position :
- Dual
- Terminal Form :
- Gull wing
- Turn On Delay Time :
- 8 ns
- Drain-source On Resistance-Max :
- 0.042Ohm
- RoHS Status :
- ROHS3 Compliant
- Input Capacitance (Ciss) (Max) @ Vds :
- 430pF @ 10V
- Operating Mode :
- ENHANCEMENT MODE
- Pulsed Drain Current-Max (IDM) :
- 26A
- Packaging :
- Tape and Reel (TR)
- Radiation Hardening :
- No
- Transistor Element Material :
- SILICON
- Published :
- 2004
- Pin Count :
- 8
- Voltage - Rated DC :
- 30V
- Drain to Source Breakdown Voltage :
- 30V
- Gate Charge (Qg) (Max) @ Vgs :
- 6.1nC @ 5V
- Fall Time (Typ) :
- 8 ns
- Rds On (Max) @ Id, Vgs :
- 26m Ω @ 6.5A, 10V
- Datasheets
- RSS065N03TB

N-Channel Tape & Reel (TR) 26m Ω @ 6.5A, 10V ±20V 430pF @ 10V 6.1nC @ 5V 8-SOIC (0.154, 3.90mm Width)
RSS065N03TB Overview
CI refers to the capacitance between two input terminals on an op amp with either input grounded, and this device's maximum input capacitance is 430pF @ 10V.In this device, the drain current (ID) is equal to the continuous current transistor can conduct.This device has 30V drain-to-source breakdown voltage, where VDS corresponds to the ID at which a specified value of ID flows and VGS equals 30V.As a result of its turn-off delay time, which is 31 ns, the device has taken time to charge its input capacitance before drain current conduction begins.There is a peak drain current of 26A, its maximum pulsed drain current.Input capacitance charge delays drain current conduction until the time it takes to charge input capacitance reaches 8 ns.Gate-source voltages (VGS) are voltages that fall across the gate-source terminal of FET transistors. VGS is sometimes 20VV.In addition to reducing power consumption, this device uses drive voltage (4V 10V).
RSS065N03TB Features
a continuous drain current (ID) of 6.5A
a drain-to-source breakdown voltage of 30V voltage
the turn-off delay time is 31 ns
based on its rated peak drain current 26A.
RSS065N03TB Applications
There are a lot of ROHM Semiconductor
RSS065N03TB applications of single MOSFETs transistors.
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
- PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
- Lighting, Server, Telecom and UPS.
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