RSS040P03FU6TB
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- Mfr.Part #
- RSS040P03FU6TB
- Manufacturer
- ROHM Semiconductor
- Package / Case
- 8-SOIC (0.154, 3.90mm Width)
- Datasheet
- Download
- Description
- MOSFET P-CH 30V 4A 8SOP
- Stock
- 2,238
- In Stock ：
- 2,238
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- Manufacturer :
- ROHM Semiconductor
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Drive Voltage (Max Rds On,Min Rds On) :
- 4V 10V
- Input Capacitance (Ciss) (Max) @ Vds :
- 800pF @ 10V
- Lead Free :
- Lead Free
- Continuous Drain Current (ID) :
- 4A
- Max Operating Temperature :
- 150°C
- Mount :
- Surface Mount
- Termination :
- SMD/SMT
- Mounting Type :
- Surface Mount
- Packaging :
- Tape and Reel (TR)
- Rds On Max :
- 58 mΩ
- Fall Time (Typ) :
- 15 ns
- Threshold Voltage :
- -2.5V
- Input Capacitance :
- 800pF
- Drain to Source Voltage (Vdss) :
- 30V
- Turn-Off Delay Time :
- 45 ns
- Operating Temperature :
- 150°C TJ
- Published :
- 2004
- Turn On Delay Time :
- 12 ns
- Min Operating Temperature :
- -55°C
- Nominal Vgs :
- -2.5 V
- Drain to Source Resistance :
- 58mOhm
- RoHS Status :
- ROHS3 Compliant
- Vgs (Max) :
- ±20V
- Gate to Source Voltage (Vgs) :
- 20V
- Dual Supply Voltage :
- -30V
- Rise Time :
- 25ns
- Rds On (Max) @ Id, Vgs :
- 58mOhm @ 4A, 10V
- Vgs(th) (Max) @ Id :
- 2.5V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs :
- 8nC @ 5V
- REACH SVHC :
- No SVHC
- Resistance :
- 106mOhm
- Supplier Device Package :
- 8-SOP
- Power Dissipation :
- 2W
- Package / Case :
- 8-SOIC (0.154, 3.90mm Width)
- Radiation Hardening :
- No
- FET Type :
- P-Channel
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Current - Continuous Drain (Id) @ 25°C :
- 4A Ta
- Power Dissipation-Max :
- 2W Ta
- Drain to Source Breakdown Voltage :
- -30V
- Number of Pins :
- 8
- Datasheets
- RSS040P03FU6TB
P-Channel Tape & Reel (TR) 58mOhm @ 4A, 10V ±20V 800pF @ 10V 8nC @ 5V 30V 8-SOIC (0.154, 3.90mm Width)
RSS040P03FU6TB Overview
With either input grounded, the input capacitance parameter, CI, represents the capacitance between the input terminals of the op amp. This device has a maximum input capacitance of 800pF @ 10V.A device's drain current is its maximum continuous current, and this device has a continuous drain current (ID) of 4A.With a drain-source breakdown voltage of -30V and a drain-source current flow rate of 1, this device has a drain-source breakdown voltage of -30V.The turn-off delay time is the amount of time it takes to charge the input capacitance of the device before drain current conduction can begin, and it is 45 ns.When a specific gate-to-source voltage (VGS) is applied to bias a MOSFET into the on state, a drain-to-source resistance of 58mOhm exists between the drain and source.Input capacitance charging takes time before drain current conduction begins, so the turn-on delay time is 12 ns.Single MOSFETs transistor is the voltage that falls across the gate-source terminal of a FET transistor that is called the gate-source voltage, VGS.-2.5V is the threshold voltage at which an electrical device activates any of its operations.Single MOSFETs transistor is necessary to have a drain to source voltage (Vdss) of 30V.Using drive voltage (4V 10V) reduces this device's overall power consumption.
RSS040P03FU6TB Features
a continuous drain current (ID) of 4A
a drain-to-source breakdown voltage of -30V voltage
the turn-off delay time is 45 ns
single MOSFETs transistor is 58mOhm
a threshold voltage of -2.5V
a 30V drain to source voltage (Vdss)
RSS040P03FU6TB Applications
There are a lot of ROHM Semiconductor
RSS040P03FU6TB applications of single MOSFETs transistors.
- Lighting
- Uninterruptible Power Supply
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
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