RSQ045N03TR

Manufacturer :

ROHM Semiconductor

Product Category :

Transistors - FETs, MOSFETs - Single

Voltage - Rated DC :

30V

Turn On Delay Time :

12 ns

Lead Free :

Lead Free

Terminal Position :

Dual

Height :

950μm

Number of Elements :

1

Factory Lead Time :

21 Weeks

RoHS Status :

ROHS3 Compliant

Number of Terminations :

6

Vgs(th) (Max) @ Id :

2.5V @ 1mA

Peak Reflow Temperature (Cel) :

260

Drive Voltage (Max Rds On,Min Rds On) :

4V 10V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Pulsed Drain Current-Max (IDM) :

18A

Pin Count :

6

Fall Time (Typ) :

19 ns

Current Rating :

4.5A

Operating Mode :

ENHANCEMENT MODE

Length :

3mm

Turn-Off Delay Time :

41 ns

Operating Temperature :

150°C TJ

Drain to Source Breakdown Voltage :

30V

Gate Charge (Qg) (Max) @ Vgs :

9.5nC @ 5V

Width :

1.8mm

Power Dissipation-Max :

600mW Ta

Gate to Source Voltage (Vgs) :

20V

Input Capacitance (Ciss) (Max) @ Vds :

520pF @ 10V

Pbfree Code :

yes

Packaging :

Tape and Reel (TR)

ECCN Code :

EAR99

Rds On (Max) @ Id, Vgs :

38m Ω @ 4.5A, 10V

Terminal Form :

Gull wing

Element Configuration :

Single

Power Dissipation :

1.25W

Time@Peak Reflow Temperature-Max (s) :

10

Rise Time :

19ns

Transistor Element Material :

SILICON

Mount :

Surface Mount, Through Hole

Mounting Type :

Surface Mount

Vgs (Max) :

±20V

FET Type :

N-Channel

Transistor Application :

SWITCHING

Current - Continuous Drain (Id) @ 25°C :

4.5A Ta

Package / Case :

SOT-23-6 Thin, TSOT-23-6

Continuous Drain Current (ID) :

4.5A

JESD-609 Code :

e1

Published :

2006

Number of Pins :

6

Resistance :

56mOhm

Radiation Hardening :

No