RSQ035P03TR

Manufacturer :

ROHM Semiconductor

Product Category :

Transistors - FETs, MOSFETs - Single

Voltage - Rated DC :

-30V

Factory Lead Time :

101 Weeks

Gate Charge (Qg) (Max) @ Vgs :

9.2nC @ 5V

ECCN Code :

EAR99

Number of Elements :

1

Power Dissipation-Max :

1.25W Ta

Mount :

Surface Mount

Operating Temperature :

150°C TJ

Drain to Source Breakdown Voltage :

-30V

Drain to Source Voltage (Vdss) :

30V

Turn-Off Delay Time :

45 ns

FET Type :

P-Channel

Drive Voltage (Max Rds On,Min Rds On) :

4V 10V

Resistance :

95mOhm

Threshold Voltage :

-2.5V

Published :

2006

Transistor Application :

SWITCHING

Radiation Hardening :

No

Operating Mode :

ENHANCEMENT MODE

Time@Peak Reflow Temperature-Max (s) :

10

Mounting Type :

Surface Mount

Pbfree Code :

yes

Pin Count :

6

Number of Pins :

6

Current Rating :

-3.5A

JESD-609 Code :

e1

Peak Reflow Temperature (Cel) :

260

Rise Time :

35ns

Turn On Delay Time :

15 ns

Gate to Source Voltage (Vgs) :

20V

Vgs (Max) :

±20V

Input Capacitance (Ciss) (Max) @ Vds :

780pF @ 10V

Terminal Form :

Gull wing

Continuous Drain Current (ID) :

3.5A

Number of Terminations :

6

Terminal Position :

Dual

REACH SVHC :

No SVHC

Packaging :

Tape and Reel (TR)

Rds On (Max) @ Id, Vgs :

65m Ω @ 3.5A, 10V

Package / Case :

SOT-23-6 Thin, TSOT-23-6

Configuration :

SINGLE WITH BUILT-IN DIODE

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

RoHS Status :

ROHS3 Compliant

Power Dissipation :

1.25W

Lead Free :

Lead Free

Transistor Element Material :

SILICON

Vgs(th) (Max) @ Id :

2.5V @ 1mA

Current - Continuous Drain (Id) @ 25°C :

3.5A Ta

Fall Time (Typ) :

35 ns