RSQ030P03TR

Manufacturer :

ROHM Semiconductor

Product Category :

Transistors - FETs, MOSFETs - Single

Terminal Finish :

TIN/TIN COPPER

Rds On (Max) @ Id, Vgs :

80m Ω @ 3A, 10V

Transistor Element Material :

SILICON

ECCN Code :

EAR99

Terminal Position :

Dual

Gate to Source Voltage (Vgs) :

20V

Time@Peak Reflow Temperature-Max (s) :

10

Fall Time (Typ) :

13 ns

Current - Continuous Drain (Id) @ 25°C :

3A Ta

Pin Count :

6

Gate Charge (Qg) (Max) @ Vgs :

6nC @ 5V

Package / Case :

SOT-23-6 Thin, TSOT-23-6

Current Rating :

-30A

Drain Current-Max (Abs) (ID) :

3A

Input Capacitance (Ciss) (Max) @ Vds :

440pF @ 10V

Power Dissipation-Max :

1.25W Ta

Operating Temperature :

150°C TJ

Power Dissipation :

1.25W

Peak Reflow Temperature (Cel) :

260

Configuration :

SINGLE WITH BUILT-IN DIODE

Vgs(th) (Max) @ Id :

2.5V @ 1mA

Threshold Voltage :

-2.5V

Operating Mode :

ENHANCEMENT MODE

FET Type :

P-Channel

Mounting Type :

Surface Mount

Rise Time :

13ns

Continuous Drain Current (ID) :

3A

Voltage - Rated DC :

-30V

Drive Voltage (Max Rds On,Min Rds On) :

4V 10V

Resistance :

80mOhm

Number of Pins :

6

Drain to Source Voltage (Vdss) :

30V

Number of Elements :

1

Mount :

Surface Mount

Radiation Hardening :

No

Number of Terminations :

6

Transistor Application :

SWITCHING

JESD-609 Code :

e3/e2

Drain to Source Breakdown Voltage :

-30V

Published :

2003

REACH SVHC :

No SVHC

Contact Plating :

Copper, Silver, Tin

Packaging :

Tape and Reel (TR)

Terminal Form :

Gull wing

Vgs (Max) :

±20V

RoHS Status :

ROHS3 Compliant

Turn On Delay Time :

10 ns

Turn-Off Delay Time :

40 ns

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Lead Free :

Lead Free

Pbfree Code :

yes