RSQ015N06TR
- Mfr.Part #
- RSQ015N06TR
- Manufacturer
- ROHM Semiconductor
- Package / Case
- SOT-23-6
- Datasheet
- Download
- Description
- MOSFET N-CH 60V 1.5A TSMT6
- Stock
- 3,023
- In Stock :
- 3,023
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- Manufacturer :
- ROHM Semiconductor
- Product Category :
- Transistors - FETs, MOSFETs - Single
- RoHS Status :
- ROHS3 Compliant
- Continuous Drain Current (ID) :
- 1.5A
- JESD-609 Code :
- e1
- Number of Elements :
- 1
- Mount :
- Surface Mount
- Peak Reflow Temperature (Cel) :
- 260
- Rds On Max :
- 290 mΩ
- Input Capacitance :
- 110pF
- Published :
- 2009
- Drain to Source Resistance :
- 210mOhm
- Number of Pins :
- 6
- Turn-Off Delay Time :
- 15 ns
- Time@Peak Reflow Temperature-Max (s) :
- 10
- Pbfree Code :
- yes
- Rise Time :
- 9ns
- Polarity/Channel Type :
- N-Channel
- Packaging :
- Tape and Reel (TR)
- Terminal Position :
- Dual
- Number of Channels :
- 1
- Turn On Delay Time :
- 6 ns
- Drain to Source Voltage (Vdss) :
- 60V
- Max Operating Temperature :
- 150°C
- Transistor Application :
- SWITCHING
- Package / Case :
- SOT-23-6
- Pin Count :
- 6
- Terminal Form :
- Gull wing
- Operating Mode :
- ENHANCEMENT MODE
- Drain to Source Breakdown Voltage :
- 60V
- ECCN Code :
- EAR99
- Max Power Dissipation :
- 1.25W
- Element Configuration :
- Single
- Number of Terminations :
- 6
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- FET Technology :
- METAL-OXIDE SEMICONDUCTOR
- Lead Free :
- Lead Free
- Min Operating Temperature :
- -55°C
- Gate to Source Voltage (Vgs) :
- 20V
- Factory Lead Time :
- 20 Weeks
- Fall Time (Typ) :
- 10 ns
- Radiation Hardening :
- No
- Datasheets
- RSQ015N06TR

Tape & Reel (TR) 60V SOT-23-6
RSQ015N06TR Overview
This device's continuous drain current (ID) is 1.5A, which represents the maximum continuous current it can conduct.In this device, the drain-source breakdown voltage is 60V and the drain-source breakdown voltage is the VDS at which a specified value of ID flows.Its turn-off delay time is 15 ns, which is the time to charge the device's input capacitance before drain current conduction begins.When a gate-to-source voltage (VGS) is applied to bias a MOSFET to the on state, the resistance between the drain and the source of the device is 210mOhm.Input capacitance charging takes time before drain current conduction begins, so the turn-on delay time is 6 ns.Gate-source voltage, or VGS, is the voltage across a FET transistor's gate-source terminal, and can be 20V volts.This transistor requires a 60V drain to source voltage (Vdss).
RSQ015N06TR Features
a continuous drain current (ID) of 1.5A
a drain-to-source breakdown voltage of 60V voltage
the turn-off delay time is 15 ns
single MOSFETs transistor is 210mOhm
a 60V drain to source voltage (Vdss)
RSQ015N06TR Applications
There are a lot of ROHM Semiconductor
RSQ015N06TR applications of single MOSFETs transistors.
- Consumer Appliances
- Lighting
- Uninterruptible Power Supply
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
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