RQ3E130MNTB1

Manufacturer :

ROHM Semiconductor

Product Category :

Transistors - FETs, MOSFETs - Single

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Pulsed Drain Current-Max (IDM) :

52A

Gate to Source Voltage (Vgs) :

20V

Mount :

Surface Mount

Terminal Form :

Flat

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Number of Elements :

1

Vgs(th) (Max) @ Id :

2.5V @ 1mA

Fall Time (Typ) :

7 ns

Factory Lead Time :

17 Weeks

Case Connection :

DRAIN

Continuous Drain Current (ID) :

13A

Published :

2013

Packaging :

Tape and Reel (TR)

Package / Case :

8-PowerVDFN

Mounting Type :

Surface Mount

Drain to Source Breakdown Voltage :

30V

Turn On Delay Time :

10 ns

Current - Continuous Drain (Id) @ 25°C :

13A Ta

Number of Channels :

1

Number of Pins :

8

FET Type :

N-Channel

Operating Mode :

ENHANCEMENT MODE

Operating Temperature :

150°C TJ

Transistor Application :

SWITCHING

Terminal Position :

Dual

Rise Time :

18ns

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Gate Charge (Qg) (Max) @ Vgs :

14nC @ 10V

RoHS Status :

ROHS3 Compliant

ECCN Code :

EAR99

Input Capacitance (Ciss) (Max) @ Vds :

840pF @ 15V

Transistor Element Material :

SILICON

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Turn-Off Delay Time :

36 ns

Number of Terminations :

5

Configuration :

SINGLE WITH BUILT-IN DIODE

Power Dissipation-Max :

2W Ta

Vgs (Max) :

±20V

Rds On (Max) @ Id, Vgs :

8.1m Ω @ 13A, 10V

JESD-30 Code :

R-PDSO-F5