RQ3E080BNTB

Manufacturer :

ROHM Semiconductor

Product Category :

Transistors - FETs, MOSFETs - Single

Package / Case :

8-PowerVDFN

Terminal Position :

Dual

Published :

2014

Number of Terminations :

5

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Power Dissipation-Max :

2W Ta

Number of Elements :

1

Mounting Type :

Surface Mount

Mount :

Surface Mount

Gate Charge (Qg) (Max) @ Vgs :

14.5nC @ 10V

Drain Current-Max (Abs) (ID) :

8A

Input Capacitance (Ciss) (Max) @ Vds :

660pF @ 15V

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Number of Pins :

8

Operating Mode :

ENHANCEMENT MODE

Current - Continuous Drain (Id) @ 25°C :

8A Ta

Factory Lead Time :

20 Weeks

RoHS Status :

ROHS3 Compliant

DS Breakdown Voltage-Min :

30V

Transistor Element Material :

SILICON

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Continuous Drain Current (ID) :

8A

JESD-30 Code :

R-PDSO-F5

Configuration :

SINGLE WITH BUILT-IN DIODE

FET Type :

N-Channel

ECCN Code :

EAR99

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Transistor Application :

SWITCHING

Case Connection :

DRAIN

Operating Temperature :

150°C TJ

Vgs (Max) :

±20V

Drain to Source Voltage (Vdss) :

30V

Drain-source On Resistance-Max :

0.022Ohm

Packaging :

Cut Tape (CT)

Pulsed Drain Current-Max (IDM) :

32A

Vgs(th) (Max) @ Id :

2.5V @ 1mA

Rds On (Max) @ Id, Vgs :

15.2m Ω @ 8A, 10V

Reach Compliance Code :

not_compliant

Lead Free :

Lead Free

Terminal Form :

Flat