RQ3E100MNTB1

Manufacturer :

ROHM Semiconductor

Product Category :

Transistors - FETs, MOSFETs - Single

Turn On Delay Time :

7 ns

Mounting Type :

Surface Mount

Gate Charge (Qg) (Max) @ Vgs :

9.9nC @ 10V

Fall Time (Typ) :

6 ns

Rise Time :

17ns

Transistor Element Material :

SILICON

Turn-Off Delay Time :

31 ns

Continuous Drain Current (ID) :

10A

Number of Pins :

8

Rds On (Max) @ Id, Vgs :

12.3m Ω @ 10A, 10V

Number of Terminations :

5

Published :

2013

Vgs(th) (Max) @ Id :

2.5V @ 1mA

Mount :

Surface Mount

Vgs (Max) :

±20V

Drain to Source Voltage (Vdss) :

30V

Pulsed Drain Current-Max (IDM) :

40A

JESD-30 Code :

R-PDSO-F5

Power Dissipation-Max :

2W Ta

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Gate to Source Voltage (Vgs) :

20V

Current - Continuous Drain (Id) @ 25°C :

10A Ta

FET Type :

N-Channel

Case Connection :

DRAIN

Package / Case :

8-PowerVDFN

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Number of Elements :

1

Operating Temperature :

150°C TJ

RoHS Status :

ROHS3 Compliant

DS Breakdown Voltage-Min :

30V

Terminal Position :

Dual

Number of Channels :

1

Input Capacitance (Ciss) (Max) @ Vds :

520pF @ 15V

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

ECCN Code :

EAR99

Transistor Application :

SWITCHING

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Terminal Form :

Flat

Operating Mode :

ENHANCEMENT MODE

Configuration :

SINGLE WITH BUILT-IN DIODE

Packaging :

Tape and Reel (TR)