RN2422TE85LF

Manufacturer :

Toshiba Electronic Devices and Storage Corporation

Product Category :

Transistors - Bipolar (BJT) - Single, Pre-Biased

Radiation Hardening :

No

Collector Emitter Voltage (VCEO) :

250mV

Mounting Type :

Surface Mount

Frequency - Transition :

200MHz

Number of Elements :

1

Max Collector Current :

800mA

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Additional Feature :

BUILT IN BIAS RESISTANCE RATIO IS 1

Mount :

Surface Mount

Element Configuration :

Single

Max Operating Temperature :

150°C

Package / Case :

TO-236-3, SC-59, SOT-23-3

Transistor Type :

PNP - Pre-Biased

Packaging :

Tape and Reel (TR)

Resistor - Emitter Base (R2) :

2.2 k Ω

Transition Frequency :

200MHz

Resistor - Base (R1) :

2.2 k Ω

Min Operating Temperature :

-55°C

Max Power Dissipation :

200mW

Current - Collector Cutoff (Max) :

500nA

Vce Saturation (Max) @ Ib, Ic :

250mV @ 1mA, 50mA

Terminal Form :

Gull wing

Terminal Position :

Dual

Published :

2009

Number of Terminations :

3

DC Current Gain (hFE) (Min) @ Ic, Vce :

65 @ 100mA 1V

Polarity/Channel Type :

PNP

Number of Pins :

3

RoHS Status :

RoHS Compliant

Factory Lead Time :

12 Weeks

Collector Emitter Breakdown Voltage :

50V

Transistor Application :

SWITCHING