RN2406,LF

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Mfr.Part #
RN2406,LF
Manufacturer
Toshiba Electronic Devices and Storage Corporation
Package / Case
TO-236-3, SC-59, SOT-23-3
Datasheet
Download
Description
TRANS PREBIAS PNP 50V 0.1A SMINI
Stock
2,425
In Stock :
2,425

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Manufacturer :
Toshiba Electronic Devices and Storage Corporation
Product Category :
Transistors - Bipolar (BJT) - Single, Pre-Biased
DC Current Gain (hFE) (Min) @ Ic, Vce :
80 @ 10mA 5V
Frequency - Transition :
200MHz
Factory Lead Time :
12 Weeks
Resistor - Base (R1) :
4.7 k Ω
Packaging :
Tape and Reel (TR)
RoHS Status :
Non-RoHS Compliant
Current - Collector Cutoff (Max) :
500nA
Current - Collector (Ic) (Max) :
100mA
Voltage - Collector Emitter Breakdown (Max) :
50V
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Mounting Type :
Surface Mount
Transistor Type :
PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic :
300mV @ 250µA, 5mA
Power - Max :
200mW
Package / Case :
TO-236-3, SC-59, SOT-23-3
Resistor - Emitter Base (R2) :
47 k Ω
Datasheets
RN2406,LF
Introducing Transistors - Bipolar (BJT) - Single, Pre-Biased Toshiba Electronic Devices and Storage Corporation RN2406,LF from Chip IC,where excellence meets affordability. This product stands out with its Mounting Type:Surface Mount, Package / Case:TO-236-3, SC-59, SOT-23-3, RN2406,LF pinout, RN2406,LF datasheet PDF, RN2406,LF amp .Beyond Transistors - Bipolar (BJT) - Single, Pre-Biased Toshiba Electronic Devices and Storage Corporation RN2406,LF ,we also offer MMUN2211LT1G, MMUN2214LT1G, MMUN2233LT1G, Our vast inventory has you covered. Contact us now for immediate solutions.

Toshiba Electronic Devices and Storage Corporation RN2406,LF


RN2406,LF datasheet pdf and Transistors - Bipolar (BJT) - Single, Pre-Biased product details from Toshiba Semiconductor and Storage stock available at

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