RF1S40N10LE

Manufacturer :

Harris Corporation

Product Category :

Transistors - FETs, MOSFETs - Arrays

Operating Temperature (Max) :

175°C

Qualification Status :

Not Qualified

Drain Current-Max (Abs) (ID) :

40A

Operating Mode :

ENHANCEMENT MODE

Surface Mount :

No

Number of Terminals :

3

JESD-30 Code :

R-PSIP-T3

Transistor Element Material :

SILICON

RoHS Status :

Non-RoHS Compliant

Power Dissipation Ambient-Max :

150W

Power Dissipation-Max (Abs) :

150W

Terminal Form :

THROUGH-HOLE

FET Technology :

METAL-OXIDE SEMICONDUCTOR

JESD-609 Code :

e0

Terminal Position :

Single

Drain-source On Resistance-Max :

0.04Ohm

ECCN Code :

EAR99

JEDEC-95 Code :

TO-262AA

Polarity/Channel Type :

N-Channel

Reach Compliance Code :

not_compliant

DS Breakdown Voltage-Min :

100V

Configuration :

SINGLE WITH BUILT-IN DIODE

Turn Off Time-Max (toff) :

165ns

Terminal Finish :

Tin/Lead (Sn/Pb)

Turn On Time-Max (ton) :

200ns

Number of Elements :

1

Case Connection :

DRAIN

Additional Feature :

AVALANCHE RATED, ESD PROTECTED, LOGIC LEVEL COMPATIBLE

Transistor Application :

SWITCHING