RF1S22N10

Manufacturer :

Harris Corporation

Product Category :

Transistors - FETs, MOSFETs - Single

JESD-609 Code :

e0

ECCN Code :

EAR99

Power Dissipation-Max (Abs) :

100W

Terminal Finish :

Tin/Lead (Sn/Pb)

Surface Mount :

yes

Qualification Status :

Not Qualified

Operating Mode :

ENHANCEMENT MODE

RoHS Status :

Non-RoHS Compliant

Operating Temperature (Max) :

175°C

JESD-30 Code :

R-PSSO-G2

Reach Compliance Code :

not_compliant

Drain Current-Max (Abs) (ID) :

22A

JEDEC-95 Code :

TO-263AB

Drain-source On Resistance-Max :

0.08Ohm

Terminal Form :

Gull wing

Pulsed Drain Current-Max (IDM) :

50A

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Terminal Position :

Single

Case Connection :

DRAIN

Number of Elements :

1

Additional Feature :

MEGAFET

Configuration :

SINGLE WITH BUILT-IN DIODE

Transistor Element Material :

SILICON

DS Breakdown Voltage-Min :

100V

Transistor Application :

SWITCHING

Number of Terminals :

2

Polarity/Channel Type :

N-Channel