QS8K21TR

Manufacturer :

ROHM Semiconductor

Product Category :

Transistors - FETs, MOSFETs - Arrays

Turn On Delay Time :

9 ns

Gate Charge (Qg) (Max) @ Vgs :

5.4nC @ 5V

Configuration :

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

Drain to Source Breakdown Voltage :

45V

Continuous Drain Current (ID) :

4A

Vgs(th) (Max) @ Id :

2.5V @ 1mA

Transistor Application :

SWITCHING

Factory Lead Time :

20 Weeks

Drain to Source Voltage (Vdss) :

45V

Lead Free :

Lead Free

Gate to Source Voltage (Vgs) :

20V

Peak Reflow Temperature (Cel) :

260

Packaging :

Tape and Reel (TR)

Pin Count :

8

Turn-Off Delay Time :

30 ns

JESD-609 Code :

e2

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Mounting Type :

Surface Mount

Max Power Dissipation :

550mW

Radiation Hardening :

No

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

FET Type :

2 N-Channel (Dual)

Transistor Element Material :

SILICON

Drain-source On Resistance-Max :

0.075Ohm

Number of Terminations :

8

FET Feature :

Logic Level Gate

Number of Pins :

8

Mount :

Surface Mount

Package / Case :

8-SMD, Flat Lead

Pbfree Code :

yes

ECCN Code :

EAR99

Rds On (Max) @ Id, Vgs :

53m Ω @ 4A, 10V

Operating Mode :

ENHANCEMENT MODE

Operating Temperature :

150°C TJ

Rise Time :

25ns

Terminal Finish :

Tin/Copper (Sn/Cu)

Published :

2012

Input Capacitance (Ciss) (Max) @ Vds :

460pF @ 10V

Drain Current-Max (Abs) (ID) :

4A

Time@Peak Reflow Temperature-Max (s) :

10

Number of Elements :

2

Fall Time (Typ) :

7 ns

RoHS Status :

ROHS3 Compliant

Number of Channels :

1