QS8K21TR
- Mfr.Part #
- QS8K21TR
- Manufacturer
- ROHM Semiconductor
- Package / Case
- 8-SMD, Flat Lead
- Datasheet
- Download
- Description
- MOSFET 2N-CH 45V 4A TSMT8
- Stock
- 2,556
- In Stock :
- 2,556
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- Manufacturer :
- ROHM Semiconductor
- Product Category :
- Transistors - FETs, MOSFETs - Arrays
- ECCN Code :
- EAR99
- FET Feature :
- Logic Level Gate
- FET Type :
- 2 N-Channel (Dual)
- Packaging :
- Tape and Reel (TR)
- Operating Mode :
- ENHANCEMENT MODE
- Vgs(th) (Max) @ Id :
- 2.5V @ 1mA
- Terminal Finish :
- Tin/Copper (Sn/Cu)
- Pbfree Code :
- yes
- Pin Count :
- 8
- Operating Temperature :
- 150°C TJ
- Turn On Delay Time :
- 9 ns
- Drain-source On Resistance-Max :
- 0.075Ohm
- JESD-609 Code :
- e2
- Radiation Hardening :
- No
- Lead Free :
- Lead Free
- Max Power Dissipation :
- 550mW
- Number of Terminations :
- 8
- Package / Case :
- 8-SMD, Flat Lead
- FET Technology :
- METAL-OXIDE SEMICONDUCTOR
- Continuous Drain Current (ID) :
- 4A
- Gate to Source Voltage (Vgs) :
- 20V
- Transistor Application :
- SWITCHING
- Rds On (Max) @ Id, Vgs :
- 53m Ω @ 4A, 10V
- Drain Current-Max (Abs) (ID) :
- 4A
- Published :
- 2012
- Number of Elements :
- 2
- Transistor Element Material :
- SILICON
- Fall Time (Typ) :
- 7 ns
- Input Capacitance (Ciss) (Max) @ Vds :
- 460pF @ 10V
- Peak Reflow Temperature (Cel) :
- 260
- Rise Time :
- 25ns
- Configuration :
- SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
- Time@Peak Reflow Temperature-Max (s) :
- 10
- Turn-Off Delay Time :
- 30 ns
- Number of Pins :
- 8
- Gate Charge (Qg) (Max) @ Vgs :
- 5.4nC @ 5V
- Mounting Type :
- Surface Mount
- RoHS Status :
- ROHS3 Compliant
- Drain to Source Voltage (Vdss) :
- 45V
- Number of Channels :
- 1
- Mount :
- Surface Mount
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Factory Lead Time :
- 20 Weeks
- Drain to Source Breakdown Voltage :
- 45V
- Datasheets
- QS8K21TR

QS8K21TR datasheet pdf and Transistors - FETs, MOSFETs - Arrays product details from ROHM Semiconductor stock available at
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