QS6M4TR

Manufacturer :

ROHM Semiconductor

Product Category :

Transistors - FETs, MOSFETs - Arrays

Operating Mode :

ENHANCEMENT MODE

Rise Time :

12ns

JESD-609 Code :

e1

Pbfree Code :

yes

Radiation Hardening :

No

Package / Case :

SOT-23-6 Thin, TSOT-23-6

Packaging :

Tape and Reel (TR)

FET Type :

N and P-Channel

Rds On (Max) @ Id, Vgs :

230m Ω @ 1.5A, 4.5V

Mounting Type :

Surface Mount

Transistor Element Material :

SILICON

Gate to Source Voltage (Vgs) :

12V

Pin Count :

6

HTS Code :

8541.29.00.95

Turn-Off Delay Time :

45 ns

ECCN Code :

EAR99

Number of Elements :

2

Polarity/Channel Type :

N-CHANNEL AND P-CHANNEL

Terminal Form :

Gull wing

Max Power Dissipation :

1.25W

Peak Reflow Temperature (Cel) :

260

Factory Lead Time :

20 Weeks

Drain-source On Resistance-Max :

0.245Ohm

Lead Free :

Lead Free

Base Part Number :

*M4

Element Configuration :

Dual

Drain to Source Breakdown Voltage :

-20V

Mount :

Surface Mount

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Continuous Drain Current (ID) :

1.5A

Current Rating :

1.5A

Published :

2006

Drain to Source Voltage (Vdss) :

30V 20V

RoHS Status :

ROHS3 Compliant

Input Capacitance (Ciss) (Max) @ Vds :

80pF @ 10V

Number of Pins :

6

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Number of Terminations :

6

Power Dissipation :

1.25W

Vgs(th) (Max) @ Id :

1.5V @ 1mA

Fall Time (Typ) :

12 ns

FET Feature :

Logic Level Gate

Operating Temperature :

150°C TJ

Threshold Voltage :

1.5V

Time@Peak Reflow Temperature-Max (s) :

10

Gate Charge (Qg) (Max) @ Vgs :

1.6nC @ 4.5V

Transistor Application :

SWITCHING