QS6M4TR

Manufacturer :

ROHM Semiconductor

Product Category :

Transistors - FETs, MOSFETs - Arrays

Published :

2006

Power Dissipation :

1.25W

Gate to Source Voltage (Vgs) :

12V

Transistor Application :

SWITCHING

Vgs(th) (Max) @ Id :

1.5V @ 1mA

Mount :

Surface Mount

Package / Case :

SOT-23-6 Thin, TSOT-23-6

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Lead Free :

Lead Free

HTS Code :

8541.29.00.95

Turn-Off Delay Time :

45 ns

Drain-source On Resistance-Max :

0.245Ohm

FET Type :

N and P-Channel

Number of Terminations :

6

Polarity/Channel Type :

N-CHANNEL AND P-CHANNEL

Max Power Dissipation :

1.25W

JESD-609 Code :

e1

Packaging :

Tape and Reel (TR)

Current Rating :

1.5A

Terminal Form :

Gull wing

Pbfree Code :

yes

Time@Peak Reflow Temperature-Max (s) :

10

Rds On (Max) @ Id, Vgs :

230m Ω @ 1.5A, 4.5V

FET Feature :

Logic Level Gate

Transistor Element Material :

SILICON

Element Configuration :

Dual

Input Capacitance (Ciss) (Max) @ Vds :

80pF @ 10V

Radiation Hardening :

No

Mounting Type :

Surface Mount

Rise Time :

12ns

Gate Charge (Qg) (Max) @ Vgs :

1.6nC @ 4.5V

Drain to Source Voltage (Vdss) :

30V 20V

Pin Count :

6

Threshold Voltage :

1.5V

Factory Lead Time :

20 Weeks

Drain to Source Breakdown Voltage :

-20V

Base Part Number :

*M4

Number of Elements :

2

RoHS Status :

ROHS3 Compliant

Peak Reflow Temperature (Cel) :

260

Number of Pins :

6

Operating Mode :

ENHANCEMENT MODE

ECCN Code :

EAR99

Fall Time (Typ) :

12 ns

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Continuous Drain Current (ID) :

1.5A

Operating Temperature :

150°C TJ