QS6J11TR

Manufacturer :

ROHM Semiconductor

Product Category :

Transistors - FETs, MOSFETs - Arrays

Factory Lead Time :

20 Weeks

Gate to Source Voltage (Vgs) :

10V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Continuous Drain Current (ID) :

2A

Fall Time (Typ) :

35 ns

Turn On Delay Time :

10 ns

Number of Pins :

6

Number of Terminations :

8

Rds On (Max) @ Id, Vgs :

105m Ω @ 2A, 4.5V

Package / Case :

SOT-23-6 Thin, TSOT-23-6

Drain Current-Max (Abs) (ID) :

2A

Pin Count :

6

Gate Charge (Qg) (Max) @ Vgs :

6.5nC @ 4.5V

Lead Free :

Lead Free

Radiation Hardening :

No

Vgs(th) (Max) @ Id :

1V @ 1mA

Operating Mode :

ENHANCEMENT MODE

RoHS Status :

ROHS3 Compliant

Max Power Dissipation :

600mW

Transistor Element Material :

SILICON

FET Type :

2 P-Channel (Dual)

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Input Capacitance (Ciss) (Max) @ Vds :

770pF @ 6V

Turn-Off Delay Time :

65 ns

Rise Time :

17ns

FET Feature :

Logic Level Gate

Time@Peak Reflow Temperature-Max (s) :

10

Peak Reflow Temperature (Cel) :

260

Terminal Form :

Gull wing

Packaging :

Tape and Reel (TR)

Published :

2009

Mount :

Surface Mount

JESD-609 Code :

e1

Drain to Source Voltage (Vdss) :

12V

Number of Elements :

1

JESD-30 Code :

R-PDSO-G8

Mounting Type :

Surface Mount

Number of Channels :

2

Pbfree Code :

yes

Pulsed Drain Current-Max (IDM) :

8A

ECCN Code :

EAR99

Base Part Number :

*J11

Element Configuration :

Dual

Operating Temperature :

150°C TJ

Transistor Application :

SWITCHING

Drain-source On Resistance-Max :

0.105Ohm