QH8K51TR

Manufacturer :

ROHM Semiconductor

Product Category :

Transistors - FETs, MOSFETs - Arrays

Operating Mode :

ENHANCEMENT MODE

Pulsed Drain Current-Max (IDM) :

6A

Vgs(th) (Max) @ Id :

2.5V @ 1mA

FET Feature :

Standard

Rds On (Max) @ Id, Vgs :

325m Ω @ 2A, 10V

Surface Mount :

yes

Operating Temperature :

150°C TJ

Gate Charge (Qg) (Max) @ Vgs :

4.7nC @ 5V

JESD-30 Code :

R-PDSO-F8

Package / Case :

8-SMD, Flat Lead

Number of Elements :

2

Factory Lead Time :

16 Weeks

Drain-source On Resistance-Max :

0.355Ohm

Drain to Source Voltage (Vdss) :

100V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Drain Current-Max (Abs) (ID) :

2A

DS Breakdown Voltage-Min :

100V

RoHS Status :

ROHS3 Compliant

Power - Max :

1.1W Ta

Transistor Application :

SWITCHING

Transistor Element Material :

SILICON

FET Type :

2 N-Channel (Dual)

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Configuration :

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

Number of Terminations :

8

Mounting Type :

Surface Mount

Current - Continuous Drain (Id) @ 25°C :

2A Ta

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Packaging :

Cut Tape (CT)

Input Capacitance (Ciss) (Max) @ Vds :

290pF @ 25V