PEMH2,115

Manufacturer :

NXP Semiconductors

Product Category :

Transistors - Bipolar (BJT) - Arrays, Pre-Biased

Terminal Form :

Flat

Length :

1.7mm

JESD-609 Code :

e3

Pin Count :

6

Lead Free :

Lead Free

Number of Pins :

6

Width :

1.3mm

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Vce Saturation (Max) @ Ib, Ic :

150mV @ 500µA, 10mA

Package / Case :

SOT-563, SOT-666

Mount :

Surface Mount

Terminal Finish :

Tin (Sn)

Max Collector Current :

100mA

DC Current Gain (hFE) (Min) @ Ic, Vce :

80 @ 5mA 5V

Height :

600μm

Min Operating Temperature :

-65°C

Packaging :

Tape and Reel (TR)

Current - Collector Cutoff (Max) :

1μA

Additional Feature :

BUILT-IN BIAS RESISTOR RATIO 1

Resistor - Base (R1) :

47k Ω

Max Output Current :

100mA

Polarity :

NPN

Emitter Base Voltage (VEBO) :

10V

Resistor - Emitter Base (R2) :

47k Ω

Mounting Type :

Surface Mount

Element Configuration :

Dual

Collector Emitter Voltage (VCEO) :

50V

Factory Lead Time :

4 Weeks

RoHS Status :

ROHS3 Compliant

Radiation Hardening :

No

Number of Elements :

2

Collector Emitter Saturation Voltage :

150mV

Operating Supply Voltage :

50V

Transistor Application :

SWITCHING

Max Power Dissipation :

300mW

Published :

2006

ECCN Code :

EAR99

Transistor Type :

2 NPN - Pre-Biased (Dual)

Collector Emitter Breakdown Voltage :

50V

Max Operating Temperature :

150°C

Number of Terminations :

6