PEMH2,115

Manufacturer :

NXP Semiconductors

Product Category :

Transistors - Bipolar (BJT) - Arrays, Pre-Biased

Width :

1.3mm

Number of Terminations :

6

Radiation Hardening :

No

Transistor Type :

2 NPN - Pre-Biased (Dual)

Number of Elements :

2

Mount :

Surface Mount

Max Operating Temperature :

150°C

Operating Supply Voltage :

50V

Collector Emitter Breakdown Voltage :

50V

Packaging :

Tape and Reel (TR)

Transistor Application :

SWITCHING

Resistor - Emitter Base (R2) :

47k Ω

Max Power Dissipation :

300mW

Mounting Type :

Surface Mount

Terminal Form :

Flat

DC Current Gain (hFE) (Min) @ Ic, Vce :

80 @ 5mA 5V

Current - Collector Cutoff (Max) :

1μA

Height :

600μm

Max Collector Current :

100mA

Package / Case :

SOT-563, SOT-666

Element Configuration :

Dual

Number of Pins :

6

Additional Feature :

BUILT-IN BIAS RESISTOR RATIO 1

Max Output Current :

100mA

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Published :

2006

Emitter Base Voltage (VEBO) :

10V

Vce Saturation (Max) @ Ib, Ic :

150mV @ 500µA, 10mA

JESD-609 Code :

e3

Collector Emitter Saturation Voltage :

150mV

Factory Lead Time :

4 Weeks

Resistor - Base (R1) :

47k Ω

Lead Free :

Lead Free

RoHS Status :

ROHS3 Compliant

Pin Count :

6

Length :

1.7mm

Polarity :

NPN

Collector Emitter Voltage (VCEO) :

50V

Min Operating Temperature :

-65°C

ECCN Code :

EAR99

Terminal Finish :

Tin (Sn)