PEMH18,115

Manufacturer :

NXP Semiconductors

Product Category :

Transistors - Bipolar (BJT) - Single

Max Collector Current :

100mA

Transistor Type :

2 NPN - Pre-Biased (Dual)

Radiation Hardening :

No

Number of Pins :

6

RoHS Status :

ROHS3 Compliant

Resistor - Emitter Base (R2) :

10k Ω

Number of Terminations :

6

Max Operating Temperature :

150°C

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Transistor Application :

SWITCHING

JESD-609 Code :

e3

Collector Emitter Breakdown Voltage :

50V

Package / Case :

SOT-563, SOT-666

Published :

2011

Peak Reflow Temperature (Cel) :

260

Vce Saturation (Max) @ Ib, Ic :

100mV @ 500µA, 10mA

Element Configuration :

Dual

Terminal Form :

Flat

Terminal Finish :

Tin (Sn)

Polarity :

NPN, PNP

Collector Emitter Voltage (VCEO) :

50V

Pin Count :

6

Packaging :

Tape and Reel (TR)

Mount :

Surface Mount

Time@Peak Reflow Temperature-Max (s) :

30

Resistor - Base (R1) :

4.7k Ω

Mounting Type :

Surface Mount

Current - Collector Cutoff (Max) :

1μA

Number of Elements :

2

Additional Feature :

BUILT IN BIAS RESISTOR RATIO 2.1

Max Power Dissipation :

300mW

Min Operating Temperature :

-65°C

ECCN Code :

EAR99

DC Current Gain (hFE) (Min) @ Ic, Vce :

50 @ 10mA 5V

Factory Lead Time :

4 Weeks