PDTC115EEF,115

Manufacturer :

NXP Semiconductors

Product Category :

Transistors - Bipolar (BJT) - Single, Pre-Biased

Base Part Number :

PDTC115

Resistor - Base (R1) :

100 k Ω

JESD-30 Code :

R-PDSO-F3

Voltage - Collector Emitter Breakdown (Max) :

50V

Power - Max :

250mW

Current - Collector Cutoff (Max) :

1μA

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Reach Compliance Code :

Unknown

Configuration :

SINGLE WITH BUILT-IN RESISTOR

ECCN Code :

EAR99

Transistor Type :

NPN - Pre-Biased

Transistor Application :

SWITCHING

Additional Feature :

BUILT-IN BIAS RESISTOR RATIO IS 1

RoHS Status :

ROHS3 Compliant

Vce Saturation (Max) @ Ib, Ic :

150mV @ 250µA, 5mA

Operating Temperature (Max) :

150°C

Transistor Element Material :

SILICON

Packaging :

Tape and Reel (TR)

Pin Count :

3

DC Current Gain (hFE) (Min) @ Ic, Vce :

80 @ 5mA 5V

Terminal Finish :

Tin

Resistor - Emitter Base (R2) :

100 k Ω

Qualification Status :

Not Qualified

Package / Case :

SC-89, SOT-490

Number of Terminations :

3

Published :

2009

Mounting Type :

Surface Mount

Number of Elements :

1

Surface Mount :

yes

Terminal Form :

Flat

Current - Collector (Ic) (Max) :

20mA

Terminal Position :

Dual

Polarity/Channel Type :

NPN

JESD-609 Code :

e3