PDTC114EK,115

Manufacturer :

NXP Semiconductors

Product Category :

Transistors - Bipolar (BJT) - Single, Pre-Biased

Number of Terminations :

3

Resistor - Emitter Base (R2) :

10 k Ω

Power - Max :

250mW

Terminal Form :

Gull wing

Polarity/Channel Type :

NPN

JESD-30 Code :

R-PDSO-G3

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Base Part Number :

PDTC114

Vce Saturation (Max) @ Ib, Ic :

150mV @ 500µA, 10mA

ECCN Code :

EAR99

Power Dissipation-Max (Abs) :

0.25W

Published :

2004

Pin Count :

3

JESD-609 Code :

e3

Current - Collector (Ic) (Max) :

100mA

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

HTS Code :

8541.21.00.95

Qualification Status :

Not Qualified

Configuration :

SINGLE WITH BUILT-IN RESISTOR

Packaging :

Tape and Reel (TR)

Transistor Application :

SWITCHING

Number of Elements :

1

Terminal Position :

Dual

Current - Collector Cutoff (Max) :

1μA

Transistor Element Material :

SILICON

Resistor - Base (R1) :

10 k Ω

DC Current Gain (hFE) (Min) @ Ic, Vce :

30 @ 5mA 5V

Terminal Finish :

Tin

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Voltage - Collector Emitter Breakdown (Max) :

50V

RoHS Status :

ROHS3 Compliant

Additional Feature :

BUILT-IN BIAS RESISTOR RATIO IS 1

Surface Mount :

yes

Mounting Type :

Surface Mount

Transistor Type :

NPN - Pre-Biased

Package / Case :

TO-236-3, SC-59, SOT-23-3