PDTC114EE,115
- Mfr.Part #
- PDTC114EE,115
- Manufacturer
- NXP Semiconductors
- Package / Case
- SC-75, SOT-416
- Datasheet
- Download
- Description
- TRANS PREBIAS NPN 150MW SC75
- Stock
- 22,140
- In Stock :
- 22,140
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- Manufacturer :
- NXP Semiconductors
- Product Category :
- Transistors - Bipolar (BJT) - Single, Pre-Biased
- Base Part Number :
- PDTC114
- Polarity/Channel Type :
- NPN
- Package / Case :
- SC-75, SOT-416
- Packaging :
- Tape and Reel (TR)
- Transistor Application :
- SWITCHING
- Number of Elements :
- 1
- Pin Count :
- 3
- RoHS Status :
- ROHS3 Compliant
- Current - Collector Cutoff (Max) :
- 1μA
- Surface Mount :
- yes
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- HTS Code :
- 8541.21.00.95
- JESD-609 Code :
- e3
- Vce Saturation (Max) @ Ib, Ic :
- 150mV @ 500µA, 10mA
- Terminal Position :
- Dual
- Resistor - Emitter Base (R2) :
- 10 k Ω
- Frequency - Transition :
- 230MHz
- Current - Collector (Ic) (Max) :
- 100mA
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Resistor - Base (R1) :
- 10 k Ω
- Configuration :
- SINGLE WITH BUILT-IN RESISTOR
- Terminal Finish :
- Tin (Sn)
- Operating Temperature (Max) :
- 150°C
- Published :
- 2003
- JESD-30 Code :
- R-PDSO-G3
- Additional Feature :
- BUILT-IN BIAS RESISTOR RATIO IS 1
- Transistor Element Material :
- SILICON
- Voltage - Collector Emitter Breakdown (Max) :
- 50V
- Qualification Status :
- Not Qualified
- Power - Max :
- 150mW
- Power Dissipation-Max (Abs) :
- 0.15W
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 30 @ 5mA 5V
- Peak Reflow Temperature (Cel) :
- 260
- Number of Terminations :
- 3
- Terminal Form :
- Gull wing
- Transistor Type :
- NPN - Pre-Biased
- Mounting Type :
- Surface Mount
- ECCN Code :
- EAR99
- Datasheets
- PDTC114EE,115

PDTC114EE,115 datasheet pdf and Transistors - Bipolar (BJT) - Single, Pre-Biased product details from NXP USA Inc. stock available at
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