PD20015S-E

Manufacturer :

STMicroelectronics

Product Category :

Transistors - FETs, MOSFETs - RF

Gain :

11dB

Element Configuration :

Single

Transistor Application :

AMPLIFIER

FET Technology :

METAL-OXIDE SEMICONDUCTOR

RoHS Status :

ROHS3 Compliant

Number of Elements :

1

Base Part Number :

PD20015

Min Operating Temperature :

-65°C

Polarity/Channel Type :

N-Channel

Drain to Source Breakdown Voltage :

40V

Additional Feature :

High Reliability

Max Operating Temperature :

165°C

Operating Mode :

ENHANCEMENT MODE

Case Connection :

SOURCE

Package / Case :

PowerSO-10 Exposed Bottom Pad

Power - Output :

15W

Transistor Type :

LDMOS

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Gate to Source Voltage (Vgs) :

15V

Current - Test :

350mA

Number of Pins :

4

Packaging :

Tube

Terminal Form :

Flat

Current Rating :

7A

Max Power Dissipation :

79W

Qualification Status :

Not Qualified

Terminal Position :

Dual

Drain Current-Max (Abs) (ID) :

7A

Voltage - Test :

13.6V

Continuous Drain Current (ID) :

7A

Drain to Source Voltage (Vdss) :

40V

JESD-30 Code :

R-PDFM-F2

Frequency :

2GHz

Number of Terminations :

2

Max Output Power :

23W

ECCN Code :

EAR99

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Moisture Sensitivity Level (MSL) :

3 (168 Hours)

Mount :

Surface Mount

Pin Count :

10

Power Dissipation :

79W