PD20015S-E

Manufacturer :

STMicroelectronics

Product Category :

Transistors - FETs, MOSFETs - RF

Max Power Dissipation :

79W

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Package / Case :

PowerSO-10 Exposed Bottom Pad

Drain Current-Max (Abs) (ID) :

7A

ECCN Code :

EAR99

Power - Output :

15W

Number of Terminations :

2

Terminal Form :

Flat

Continuous Drain Current (ID) :

7A

Current - Test :

350mA

Mount :

Surface Mount

RoHS Status :

ROHS3 Compliant

Moisture Sensitivity Level (MSL) :

3 (168 Hours)

Drain to Source Voltage (Vdss) :

40V

Power Dissipation :

79W

Polarity/Channel Type :

N-Channel

Additional Feature :

High Reliability

Number of Pins :

4

Min Operating Temperature :

-65°C

Element Configuration :

Single

Number of Elements :

1

Max Operating Temperature :

165°C

Base Part Number :

PD20015

Operating Mode :

ENHANCEMENT MODE

Max Output Power :

23W

Frequency :

2GHz

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Qualification Status :

Not Qualified

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Case Connection :

SOURCE

Voltage - Test :

13.6V

Transistor Type :

LDMOS

Packaging :

Tube

Transistor Application :

AMPLIFIER

Current Rating :

7A

JESD-30 Code :

R-PDFM-F2

Drain to Source Breakdown Voltage :

40V

Pin Count :

10

Gain :

11dB

Terminal Position :

Dual

Gate to Source Voltage (Vgs) :

15V