PD20015S-E

Manufacturer :

STMicroelectronics

Product Category :

Transistors - FETs, MOSFETs - RF

Current Rating :

7A

Max Output Power :

23W

Frequency :

2GHz

Pin Count :

10

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Min Operating Temperature :

-65°C

Power - Output :

15W

ECCN Code :

EAR99

Max Power Dissipation :

79W

Voltage - Test :

13.6V

Number of Elements :

1

Mount :

Surface Mount

Moisture Sensitivity Level (MSL) :

3 (168 Hours)

Current - Test :

350mA

Number of Terminations :

2

Packaging :

Tube

RoHS Status :

ROHS3 Compliant

Drain to Source Voltage (Vdss) :

40V

Element Configuration :

Single

Package / Case :

PowerSO-10 Exposed Bottom Pad

Gain :

11dB

Max Operating Temperature :

165°C

Transistor Application :

AMPLIFIER

Terminal Position :

Dual

Power Dissipation :

79W

Drain to Source Breakdown Voltage :

40V

Qualification Status :

Not Qualified

Drain Current-Max (Abs) (ID) :

7A

Polarity/Channel Type :

N-Channel

Additional Feature :

High Reliability

Case Connection :

SOURCE

Gate to Source Voltage (Vgs) :

15V

JESD-30 Code :

R-PDFM-F2

Continuous Drain Current (ID) :

7A

Terminal Form :

Flat

Base Part Number :

PD20015

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Operating Mode :

ENHANCEMENT MODE

Number of Pins :

4

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Transistor Type :

LDMOS