PD20010-E

Manufacturer :

STMicroelectronics

Product Category :

Transistors - FETs, MOSFETs - RF

Voltage - Test :

13.6V

Drain to Source Breakdown Voltage :

40V

Min Operating Temperature :

-65°C

Power - Output :

10W

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Factory Lead Time :

25 Weeks

Current Rating :

5A

Moisture Sensitivity Level (MSL) :

3 (168 Hours)

Transistor Application :

AMPLIFIER

Element Configuration :

Single

Max Operating Temperature :

165°C

Terminal Position :

Dual

JESD-30 Code :

R-PDSO-G2

Number of Pins :

3

Qualification Status :

Not Qualified

Mount :

Surface Mount

Terminal Form :

Gull wing

Case Connection :

SOURCE

Polarity/Channel Type :

N-Channel

Continuous Drain Current (ID) :

5A

Max Output Power :

15W

Gate to Source Voltage (Vgs) :

15V

Transistor Type :

LDMOS

Base Part Number :

PD20010

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Additional Feature :

ESD PROTECTION, HIGH RELIABILITY

Number of Elements :

1

Max Power Dissipation :

59W

Drain to Source Voltage (Vdss) :

40V

Operating Mode :

ENHANCEMENT MODE

Gain :

11dB

Frequency :

2GHz

Package / Case :

PowerSO-10RF Exposed Bottom Pad (2 Formed Leads)

Current - Test :

150mA

Packaging :

Tube

Lifecycle Status :

ACTIVE (Last Updated: 7 months ago)

ECCN Code :

EAR99

Power Dissipation :

59W

FET Technology :

METAL-OXIDE SEMICONDUCTOR

RoHS Status :

ROHS3 Compliant

Number of Terminations :

2

Pin Count :

10

Drain Current-Max (Abs) (ID) :

5A