PD20010-E

Manufacturer :

STMicroelectronics

Product Category :

Transistors - FETs, MOSFETs - RF

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Package / Case :

PowerSO-10RF Exposed Bottom Pad (2 Formed Leads)

Additional Feature :

ESD PROTECTION, HIGH RELIABILITY

Gate to Source Voltage (Vgs) :

15V

JESD-30 Code :

R-PDSO-G2

Terminal Position :

Dual

Voltage - Test :

13.6V

Base Part Number :

PD20010

Lifecycle Status :

ACTIVE (Last Updated: 7 months ago)

Pin Count :

10

Drain Current-Max (Abs) (ID) :

5A

Moisture Sensitivity Level (MSL) :

3 (168 Hours)

Continuous Drain Current (ID) :

5A

Factory Lead Time :

25 Weeks

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Power Dissipation :

59W

Current Rating :

5A

Min Operating Temperature :

-65°C

Max Operating Temperature :

165°C

Case Connection :

SOURCE

Max Power Dissipation :

59W

Qualification Status :

Not Qualified

Number of Terminations :

2

Current - Test :

150mA

Drain to Source Breakdown Voltage :

40V

Drain to Source Voltage (Vdss) :

40V

Max Output Power :

15W

ECCN Code :

EAR99

RoHS Status :

ROHS3 Compliant

Number of Pins :

3

Terminal Form :

Gull wing

Transistor Application :

AMPLIFIER

Number of Elements :

1

Polarity/Channel Type :

N-Channel

Gain :

11dB

Frequency :

2GHz

Operating Mode :

ENHANCEMENT MODE

Element Configuration :

Single

Mount :

Surface Mount

Packaging :

Tube

Transistor Type :

LDMOS

Power - Output :

10W