PD20010TR-E

Manufacturer :

STMicroelectronics

Product Category :

Transistors - FETs, MOSFETs - RF

Max Operating Temperature :

150°C

Package / Case :

PowerSO-10RF Exposed Bottom Pad (2 Formed Leads)

Base Part Number :

PD20010

Number of Pins :

3

ECCN Code :

EAR99

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Frequency :

2GHz

Min Operating Temperature :

-65°C

Pin Count :

10

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Terminal Position :

Dual

Power Dissipation :

59W

Power - Output :

10W

Gate to Source Voltage (Vgs) :

15V

Number of Terminations :

2

Factory Lead Time :

25 Weeks

Transistor Application :

AMPLIFIER

Operating Mode :

ENHANCEMENT MODE

Polarity/Channel Type :

N-Channel

Drain Current-Max (Abs) (ID) :

5A

Continuous Drain Current (ID) :

5A

Current - Test :

150mA

Case Connection :

SOURCE

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Packaging :

Tape and Reel (TR)

Gain :

11dB

Transistor Type :

LDMOS

Qualification Status :

Not Qualified

Voltage - Test :

13.6V

Additional Feature :

ESD PROTECTION, HIGH RELIABILITY

JESD-30 Code :

R-PDSO-G2

Drain to Source Breakdown Voltage :

40V

Element Configuration :

Single

Moisture Sensitivity Level (MSL) :

3 (168 Hours)

Terminal Form :

Gull wing

Mount :

Surface Mount

Max Output Power :

15W

Number of Elements :

1

Max Power Dissipation :

59W

RoHS Status :

ROHS3 Compliant

Drain to Source Voltage (Vdss) :

40V

Current Rating :

5A