PD20010S-E

Manufacturer :

STMicroelectronics

Product Category :

Transistors - FETs, MOSFETs - RF

Transistor Type :

LDMOS

Gate to Source Voltage (Vgs) :

15V

Number of Elements :

1

Max Operating Temperature :

165°C

Case Connection :

SOURCE

Max Output Power :

15W

Additional Feature :

ESD PROTECTION, HIGH RELIABILITY

RoHS Status :

ROHS3 Compliant

Gain :

11dB

Element Configuration :

Single

Base Part Number :

PD20010

Current Rating :

5A

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Drain Current-Max (Abs) (ID) :

5A

Min Operating Temperature :

-65°C

Terminal Position :

Dual

Package / Case :

PowerSO-10RF Exposed Bottom Pad (2 Straight Leads)

Polarity/Channel Type :

N-Channel

Drain to Source Voltage (Vdss) :

40V

Pin Count :

10

Qualification Status :

Not Qualified

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Mount :

Surface Mount

Power - Output :

10W

Transistor Application :

AMPLIFIER

Frequency :

2GHz

Current - Test :

150mA

Drain to Source Breakdown Voltage :

40V

Voltage - Test :

13.6V

Packaging :

Tube

ECCN Code :

EAR99

Continuous Drain Current (ID) :

5A

Number of Pins :

3

JESD-30 Code :

R-PDFP-F2

Moisture Sensitivity Level (MSL) :

3 (168 Hours)

Operating Mode :

ENHANCEMENT MODE

Max Power Dissipation :

59W

Power Dissipation :

59W

Number of Terminations :

2

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Terminal Form :

Flat