NTE69

Manufacturer :

NTE Electronics, Inc.

Product Category :

Transistors - Bipolar (BJT) - RF

Mounting Type :

Through Hole

Operating Temperature :

-55°C ~ 150°C (TJ)

Terminal Position :

BOTTOM

DC Current Gain (hFE) (Min) @ Ic, Vce :

25 @ 4mA, 4V

Qualification Status :

Not Qualified

Reach Compliance Code :

Unknown

Package :

Bag

Power - Max :

350mW

Supplier Device Package :

TO-92

Configuration :

Single

Power Dissipation Ambient-Max :

1 W

Transistor Application :

AMPLIFIER

HTS Code :

8541.21.00.75

Terminal Form :

Wire

Manufacturer :

NTE Electronics

Subcategory :

Other Transistors

Collector Current-Max (IC) :

0.05 A

Voltage - Collector Emitter Breakdown (Max) :

25V

JEDEC-95 Code :

TO-92

Noise Figure (dB Typ @ f) :

-

Frequency - Transition :

1.1GHz

Transistor Element Material :

SILICON

Number of Terminals :

3

Highest Frequency Band :

VERY HIGH FREQUENCY BAND

Gain :

-

Transistor Type :

NPN

Surface Mount :

No

Collector-Emitter Voltage-Max :

25 V

Power Dissipation-Max (Abs) :

0.25 W

Current - Collector (Ic) (Max) :

50mA

Pin Count :

3

Polarity/Channel Type :

NPN

JESD-30 Code :

O-PBCY-W3

ECCN Code :

EAR99

DC Current Gain-Min (hFE) :

70

Product Status :

Active

Number of Elements :

1

Series :

-

Package Shape :

Round

Collector-Base Capacitance-Max :

1 pF

Package / Case :

TO-226-3, TO-92-3 (TO-226AA)