NTE319P

Manufacturer :

NTE Electronics, Inc.

Product Category :

Transistors - Bipolar (BJT) - RF

Transistor Application :

AMPLIFIER

Operating Temperature :

150°C (TJ)

Current - Collector (Ic) (Max) :

50mA

Polarity/Channel Type :

NPN

ECCN Code :

EAR99

DC Current Gain-Min (hFE) :

35

Mounting Type :

Through Hole

Package :

Bag

Collector Current-Max (IC) :

0.05 A

Package / Case :

TO-226-3, TO-92-3 (TO-226AA)

Frequency - Transition :

500MHz

Transistor Element Material :

SILICON

Subcategory :

Other Transistors

Highest Frequency Band :

VERY HIGH FREQUENCY BAND

Surface Mount :

No

JESD-30 Code :

O-PBCY-W3

DC Current Gain (hFE) (Min) @ Ic, Vce :

20 @ 2mA, 10V

Product Status :

Active

HTS Code :

8541.21.00.75

Supplier Device Package :

TO-92

Power - Max :

625mW

Voltage - Collector Emitter Breakdown (Max) :

20V

Configuration :

Single

Collector-Emitter Voltage-Max :

20 V

Number of Elements :

1

Gain :

29dB

Package Shape :

Round

Qualification Status :

Not Qualified

Terminal Position :

BOTTOM

Number of Terminals :

3

Terminal Form :

Wire

JEDEC-95 Code :

TO-92

Noise Figure (dB Typ @ f) :

2.7dB @ 45MHz

Series :

-

Transistor Type :

NPN

Manufacturer :

NTE Electronics

Collector-Base Capacitance-Max :

0.22 pF

Power Dissipation-Max (Abs) :

0.5 W

Pin Count :

3

Reach Compliance Code :

Unknown