NTE2987

Manufacturer :

NTE Electronics, Inc.

Product Category :

Transistors - FETs, MOSFETs - Single

Avalanche Energy Rating (Eas) :

120 mJ

Operating Temp Range :

-65C to 175C

Pulsed Drain Current-Max (IDM) :

80 A

Operating Temperature :

175°C (TJ)

Polarity :

N

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Package Type :

TO-220

Additional Feature :

FAST SWITCHING

Rad Hardened :

No

Configuration :

Single

Polarity/Channel Type :

N-Channel

Supplier Device Package :

TO-220

Drain-source On Resistance-Max :

0.12 Ω

DS Breakdown Voltage-Min :

100 V

Input Capacitance (Ciss) (Max) @ Vds :

1500 pF @ 25 V

Type :

Power MOSFET

Drain-Source On-Volt :

100(V)

Drain to Source Voltage (Vdss) :

100 V

Operating Mode :

ENHANCEMENT MODE

Gate Charge (Qg) (Max) @ Vgs :

30 nC @ 5 V

Transistor Element Material :

SILICON

FET Type :

N-Channel

Power Dissipation (Max) :

105W (Tc)

Mounting :

Through Hole

Terminal Position :

Single

Current - Continuous Drain (Id) @ 25°C :

20A

Vgs (Max) :

±15V

Operating Temperature Classification :

Military

Gate-Source Voltage (Max) :

±15(V)

Package Shape :

RECTANGULAR

ECCN Code :

EAR99

Reach Compliance Code :

Unknown

Power Dissipation :

105(W)

Product Status :

Active

Mounting Type :

Through Hole

Terminal Form :

THROUGH-HOLE

Continuous Drain Current :

20(A)

Rds On (Max) @ Id, Vgs :

120mOhm @ 10A, 5V

Number of Terminals :

3

JESD-30 Code :

R-PSFM-T3

Qualification Status :

Not Qualified

Package :

Bag

Number of Elements :

1

Transistor Application :

SWITCHING

Vgs(th) (Max) @ Id :

2.5V @ 250μA

Case Connection :

DRAIN

FET Feature :

Logic Level Gate, 4V Drive

Pin Count :

3 +Tab

Manufacturer :

NTE Electronics

Package / Case :

TO-220-3

Technology :

MOSFET (Metal Oxide)

Channel Mode :

Enhancement

Surface Mount :

No

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Series :

-

Drive Voltage (Max Rds On, Min Rds On) :

5V