NTE2946

Manufacturer :

NTE Electronics, Inc.

Product Category :

Transistors - FETs, MOSFETs - Single

Mounting Type :

Through Hole

DS Breakdown Voltage-Min :

500 V

Technology :

MOSFET (Metal Oxide)

Package Shape :

RECTANGULAR

Vgs (Max) :

±20V

Configuration :

SINGLE WITH BUILT-IN DIODE

Polarity/Channel Type :

N-Channel

Number of Elements :

1

Number of Terminals :

3

JEDEC-95 Code :

TO-220AB

Surface Mount :

No

Additional Feature :

High Reliability

Drain-source On Resistance-Max :

0.85 Ω

Gate Charge (Qg) (Max) @ Vgs :

74 nC @ 10 V

Series :

-

Terminal Position :

Single

Avalanche Energy Rating (Eas) :

161 mJ

Transistor Element Material :

SILICON

Manufacturer :

NTE Electronics

ECCN Code :

EAR99

Pin Count :

3

Transistor Application :

SWITCHING

Supplier Device Package :

TO-220 Full Pack

Reach Compliance Code :

Unknown

Operating Temperature :

-55°C ~ 150°C (TJ)

Vgs(th) (Max) @ Id :

4V @ 250µA

Drive Voltage (Max Rds On, Min Rds On) :

10V

JESD-30 Code :

R-PSFM-T3

Operating Mode :

ENHANCEMENT MODE

Pulsed Drain Current-Max (IDM) :

32 A

Rds On (Max) @ Id, Vgs :

850mOhm @ 4A, 10V

Package / Case :

TO-220-3 Full Pack

Case Connection :

Isolated

Package :

Bag

Input Capacitance (Ciss) (Max) @ Vds :

1510 pF @ 25 V

Current - Continuous Drain (Id) @ 25°C :

4.6A

Product Status :

Active

Power Dissipation (Max) :

40W (Tc)

FET Type :

N-Channel

Qualification Status :

Not Qualified

Terminal Form :

THROUGH-HOLE

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Drain to Source Voltage (Vdss) :

500 V

FET Feature :

Standard