NTE2933

Manufacturer :

NTE Electronics, Inc.

Product Category :

Transistors - FETs, MOSFETs - Single

Product Status :

Active

JESD-30 Code :

R-PSFM-T3

FET Feature :

-

Drain-source On Resistance-Max :

0.55 Ω

Surface Mount :

No

Avalanche Energy Rating (Eas) :

549 mJ

Current - Continuous Drain (Id) @ 25°C :

8A (Tc)

Rds On (Max) @ Id, Vgs :

550mOhm @ 4A, 10V

Gate Charge (Qg) (Max) @ Vgs :

75 nC @ 10 V

Drive Voltage (Max Rds On, Min Rds On) :

10V

Series :

-

Terminal Position :

Single

Terminal Form :

THROUGH-HOLE

Transistor Application :

SWITCHING

Pulsed Drain Current-Max (IDM) :

44 A

Transistor Element Material :

SILICON

DS Breakdown Voltage-Min :

400 V

Vgs (Max) :

±30V

FET Type :

N-Channel

Number of Elements :

1

Operating Mode :

ENHANCEMENT MODE

Package / Case :

TO-3P-3 Full Pack

Mounting Type :

Through Hole

Technology :

MOSFET (Metal Oxide)

Power Dissipation (Max) :

85W (Tc)

Number of Terminals :

3

Manufacturer :

NTE Electronics

Polarity/Channel Type :

N-Channel

Qualification Status :

Not Qualified

Operating Temperature :

-55°C ~ 150°C (TJ)

Package :

Bag

ECCN Code :

EAR99

Package Shape :

RECTANGULAR

Input Capacitance (Ciss) (Max) @ Vds :

1530 pF @ 25 V

Configuration :

SINGLE WITH BUILT-IN DIODE

Vgs(th) (Max) @ Id :

4V @ 250µA

Reach Compliance Code :

Unknown

Supplier Device Package :

TO-3PML

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Drain to Source Voltage (Vdss) :

400 V