NTE2932

Manufacturer :

NTE Electronics, Inc.

Product Category :

Transistors - FETs, MOSFETs - Single

Terminal Form :

THROUGH-HOLE

Technology :

MOSFET (Metal Oxide)

Input Capacitance (Ciss) (Max) @ Vds :

3000 pF @ 25 V

ECCN Code :

EAR99

Manufacturer :

NTE Electronics

Operating Mode :

ENHANCEMENT MODE

Drain to Source Voltage (Vdss) :

200 V

FET Feature :

-

Series :

-

Vgs(th) (Max) @ Id :

4V @ 250µA

Qualification Status :

Not Qualified

Package :

Bag

Vgs (Max) :

±20V

Transistor Application :

SWITCHING

Transistor Element Material :

SILICON

Reach Compliance Code :

Unknown

FET Type :

N-Channel

Package Shape :

RECTANGULAR

Package / Case :

TO-3P-3 Full Pack

Drain-source On Resistance-Max :

0.085 Ω

Gate Charge (Qg) (Max) @ Vgs :

123 nC @ 10 V

Surface Mount :

No

Number of Elements :

1

Polarity/Channel Type :

N-Channel

Operating Temperature :

-55°C ~ 150°C (TJ)

Product Status :

Active

Rds On (Max) @ Id, Vgs :

85mOhm @ 10.65A, 10V

Number of Terminals :

3

JESD-30 Code :

R-PSFM-T3

Terminal Position :

Single

Supplier Device Package :

TO-3PML

Current - Continuous Drain (Id) @ 25°C :

21.3A (Tc)

Power Dissipation-Max (Abs) :

90 W

Power Dissipation (Max) :

90W (Tc)

Mounting Type :

Through Hole

Avalanche Energy Rating (Eas) :

605 mJ

Pulsed Drain Current-Max (IDM) :

130 A

Drive Voltage (Max Rds On, Min Rds On) :

10V

Drain Current-Max (Abs) (ID) :

21.3 A

Configuration :

SINGLE WITH BUILT-IN DIODE

Subcategory :

FET General Purpose Power

DS Breakdown Voltage-Min :

200 V

FET Technology :

METAL-OXIDE SEMICONDUCTOR