NTE2397

Manufacturer :

NTE Electronics, Inc.

Product Category :

Transistors - FETs, MOSFETs - Single

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Input Capacitance (Ciss) (Max) @ Vds :

1400 pF @ 25 V

Series :

-

Operating Mode :

ENHANCEMENT MODE

Drain-source On Resistance-Max :

0.55 Ω

Terminal Form :

THROUGH-HOLE

Drain to Source Voltage (Vdss) :

400 V

Current - Continuous Drain (Id) @ 25°C :

10A (Tc)

ECCN Code :

EAR99

Vgs (Max) :

±20V

Operating Temperature Classification :

Military

Power Dissipation (Max) :

125W (Tc)

Package / Case :

TO-220-3

Type :

Power MOSFET

Operating Temp Range :

-55C to 150C

Operating Temperature :

-55°C ~ 150°C (TJ)

Rds On (Max) @ Id, Vgs :

550mOhm @ 6A, 10V

Drain-Source On-Volt :

400(V)

Number of Terminals :

3

Power Dissipation-Max (Abs) :

125 W

Polarity :

N

Case Connection :

DRAIN

Package :

Bag

Channel Mode :

Enhancement

Product Status :

Active

Power Dissipation :

125(W)

Additional Feature :

AVALANCHE RATED

Rad Hardened :

No

Pulsed Drain Current-Max (IDM) :

40 A

Mounting :

Through Hole

Configuration :

SINGLE WITH BUILT-IN DIODE

Drive Voltage (Max Rds On, Min Rds On) :

10V

FET Technology :

METAL-OXIDE SEMICONDUCTOR

DS Breakdown Voltage-Min :

400 V

Subcategory :

FET General Purpose Power

Continuous Drain Current :

10(A)

Gate-Source Voltage (Max) :

±20(V)

Vgs(th) (Max) @ Id :

4V @ 250µA

Terminal Position :

Single

Transistor Element Material :

SILICON

Mounting Type :

Through Hole

JESD-30 Code :

R-PSFM-T3

Manufacturer :

NTE Electronics

Package Type :

TO-220

Avalanche Energy Rating (Eas) :

520 mJ

Number of Elements :

1

Gate Charge (Qg) (Max) @ Vgs :

63 nC @ 10 V

Surface Mount :

No

Transistor Application :

SWITCHING

Package Shape :

RECTANGULAR

Supplier Device Package :

TO-220

Polarity/Channel Type :

N-Channel

FET Feature :

-

Pin Count :

3 +Tab

Drain Current-Max (Abs) (ID) :

10 A

Qualification Status :

Not Qualified

Reach Compliance Code :

Unknown

FET Type :

N-Channel