NTE2395
- Mfr.Part #
- NTE2395
- Manufacturer
- NTE Electronics, Inc.
- Package / Case
- TO-220-3
- Datasheet
- Download
- Description
- MOSFET N-CHANNEL 60V 50A TO220
- Stock
- 673
- In Stock :
- 673
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- Manufacturer :
- NTE Electronics, Inc.
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Vgs (Max) :
- ±20V
- Transistor Element Material :
- SILICON
- Mount :
- Through Hole
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- Polarity/Channel Type :
- N-Channel
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Rds On (Max) @ Id, Vgs :
- 28mOhm @ 31A, 10V
- Input Capacitance (Ciss) (Max) @ Vds :
- 1900 pF @ 25 V
- Height :
- 15.494 mm
- Manufacturer :
- NTE Electronics
- Drain-source On Resistance-Max :
- 0.028 Ω
- Gate to Source Voltage (Vgs) :
- 20 V
- Package Shape :
- RECTANGULAR
- Turn-Off Delay Time :
- 45 ns
- Supplier Device Package :
- TO-220
- Power Dissipation-Max (Abs) :
- 150 W
- Nominal Vgs :
- 2 V
- Schedule B :
- 8541290080
- Number of Pins :
- 3
- Vgs(th) (Max) @ Id :
- 4V @ 250µA
- Number of Elements :
- 1
- Surface Mount :
- No
- Series :
- -
- Drain to Source Voltage (Vdss) :
- 60 V
- Element Configuration :
- Single
- Product Status :
- Active
- Subcategory :
- FET General Purpose Power
- Transistor Application :
- SWITCHING
- Terminal Form :
- THROUGH-HOLE
- DS Breakdown Voltage-Min :
- 60 V
- FET Feature :
- -
- Operating Mode :
- ENHANCEMENT MODE
- Technology :
- MOSFET (Metal Oxide)
- Rise Time :
- 110 ns
- Operating Temperature :
- -55°C ~ 175°C (TJ)
- FET Technology :
- METAL-OXIDE SEMICONDUCTOR
- Drive Voltage (Max Rds On, Min Rds On) :
- 10V
- Power Dissipation :
- 150 W
- Avalanche Energy Rating (Eas) :
- 100 mJ
- Max Operating Temperature :
- 175 °C
- Package :
- Bag
- Turn-On Delay Time :
- 14 ns
- Terminal Position :
- Single
- Pulsed Drain Current-Max (IDM) :
- 200 A
- Drain to Source Resistance :
- 28 mΩ
- Qualification Status :
- Not Qualified
- Number of Terminals :
- 3
- FET Type :
- N-Channel
- Case Connection :
- DRAIN
- Drain Current-Max (Abs) (ID) :
- 50 A
- Power Dissipation (Max) :
- 150W (Tc)
- Gate Charge (Qg) (Max) @ Vgs :
- 67 nC @ 10 V
- Length :
- 10.668 mm
- Threshold Voltage :
- 4 V
- Drain to Source Breakdown Voltage :
- 60 V
- Package / Case :
- TO-220-3
- JESD-30 Code :
- R-PSFM-T3
- Recovery Time :
- 180 ns
- Min Operating Temperature :
- -55 °C
- RoHS :
- Compliant
- ECCN Code :
- EAR99
- Max Power Dissipation :
- 150 W
- Continuous Drain Current (ID) :
- 50 A
- Reach Compliance Code :
- Unknown
- REACH SVHC :
- Unknown
- Current - Continuous Drain (Id) @ 25°C :
- 50A (Tc)
- Mounting Type :
- Through Hole
- Datasheets
- NTE2395

MOSFET (Metal Oxide) N-Channel 28mOhm @ 31A, 10V ±20V 1900 pF @ 25 V 67 nC @ 10 V 60 V TO-220-3
NTE2395 Overview
When a voltage exceeds breakdown voltage of a MOSFET, breakdown phenomena occurs and current flows. It's called “Avalanche break down”, and the energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating (Eas) is 100 mJ.The input capacitance parameter, CI, is defined as the capacitance between the input terminals of an op amp with either input grounded, and this device's maximal input capacitance is 1900 pF @ 25 V.The drain current is the maximum continuous current the device can conduct, and the continuous drain current (ID) of this device is 50 A. Drain-source breakdown voltage is the VDS at which a specified value of ID flows, with VGS=60 V. And this device has 60 V drain to source breakdown voltage.The drain current is the maximum continuous current the device can conduct, and the drain current of this device is 50 A.Turn-Off delay time is the time taken to charge the input capacitance of the device before drain current conduction can start, and its turn-off delay time is 45 ns.IDM is the maximum rated peak drain current for a power MOSFET, and its maximal pulsed drain current is 200 A. Drain to Source Resistance is the resistance between the drain and the source of a MOSFET when a specific gate-to-source voltage (VGS) is applied to bias the device to the on state, and the resistance of this device is 28 mΩ. The gate-source voltage, VGS, of a FET transistor is the voltage that falls across the gate-source terminal of the transistor and its voltage can be 20 V.Threshold voltage is the point at which an electrical device is set to activate any one of its operations, and this transistor has 4 V threshold voltage. Single MOSFETs transistor is recommended that the DS breakdown voltage be kept above 60 V in order to maintain normal operation.Operating this transistor requires a 60 V drain to source voltage (Vdss).
NTE2395 Features
the avalanche energy rating (Eas) is 100 mJ
a continuous drain current (ID) of 50 A
a drain-to-source breakdown voltage of 60 V voltage
the turn-off delay time is 45 ns
based on its rated peak drain current 200 A.
single MOSFETs transistor is 28 mΩ
a threshold voltage of 4 V
a 60 V drain to source voltage (Vdss)
NTE2395 Applications
There are a lot of NTE Electronics, Inc.
NTE2395 applications of single MOSFETs transistors.
- LCD/LED TV
- Consumer Appliances
- Lighting
- Uninterruptible Power Supply
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
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