NTE2393

Manufacturer :

NTE Electronics, Inc.

Product Category :

Transistors - FETs, MOSFETs - Single

Rds On (Max) @ Id, Vgs :

670mOhm @ 5A, 10V

JESD-30 Code :

R-PSFM-T3

Package Shape :

RECTANGULAR

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Power Dissipation (Max) :

125W (Tc)

Package :

Bag

Vgs (Max) :

±20V

Supplier Device Package :

TO-3P

Current - Continuous Drain (Id) @ 25°C :

10A (Tc)

Series :

-

Drain-source On Resistance-Max :

0.7 Ω

Drain Current-Max (Abs) (ID) :

9 A

FET Type :

N-Channel

Operating Mode :

ENHANCEMENT MODE

Qualification Status :

Not Qualified

FET Feature :

-

Power Dissipation-Max (Abs) :

150 W

Manufacturer :

NTE Electronics

Number of Terminals :

3

Operating Temperature :

150°C (TJ)

Terminal Position :

Single

ECCN Code :

EAR99

Transistor Application :

SWITCHING

Drain to Source Voltage (Vdss) :

500 V

Subcategory :

FET General Purpose Power

Product Status :

Active

Package / Case :

TO-3P-3, SC-65-3

Terminal Form :

THROUGH-HOLE

DS Breakdown Voltage-Min :

500 V

Configuration :

SINGLE WITH BUILT-IN DIODE

Reach Compliance Code :

Unknown

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Polarity/Channel Type :

N-Channel

Vgs(th) (Max) @ Id :

4V @ 1mA

Mounting Type :

Through Hole

Surface Mount :

No

Drive Voltage (Max Rds On, Min Rds On) :

10V

Pulsed Drain Current-Max (IDM) :

36 A

Number of Elements :

1

Transistor Element Material :

SILICON