NTE2392

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Mfr.Part #
NTE2392
Manufacturer
NTE Electronics, Inc.
Package / Case
TO-204AA, TO-3
Datasheet
Download
Description
MOSFET N-CHANNEL 100V 40A TO3
Stock
869
In Stock :
869

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Manufacturer :
NTE Electronics, Inc.
Product Category :
Transistors - FETs, MOSFETs - Single
Package Type :
TO-3
FET Feature :
-
Max Operating Temperature :
150 °C
Type :
Power MOSFET
Qualification Status :
Not Qualified
Transistor Application :
SWITCHING
RoHS :
Non-Compliant
Vgs(th) (Max) @ Id :
4V @ 250µA
Operating Mode :
ENHANCEMENT MODE
Drain to Source Voltage (Vdss) :
100 V
Current - Continuous Drain (Id) @ 25°C :
40A (Tc)
Rad Hardened :
No
Rds On (Max) @ Id, Vgs :
55mOhm @ 20A, 10V
Gate-Source Voltage (Max) :
±20(V)
Continuous Drain Current (ID) :
40 A
Input Capacitance (Ciss) (Max) @ Vds :
3000 pF @ 25 V
Mounting :
Through Hole
Package Shape :
Round
Drive Voltage (Max Rds On, Min Rds On) :
10V
Turn-On Delay Time :
35 ns
JESD-30 Code :
O-MBFM-P2
Reach Compliance Code :
Unknown
REACH SVHC :
Unknown
Number of Elements :
1
Drain-source On Resistance-Max :
0.055 Ω
Subcategory :
FET General Purpose Power
Transistor Element Material :
SILICON
Power Dissipation :
150 W
Power Dissipation Ambient-Max :
150 W
Configuration :
SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max (Abs) :
125 W
Threshold Voltage :
4 V
ECCN Code :
EAR99
Drain to Source Breakdown Voltage :
100 V
Mounting Type :
Through Hole
Terminal Position :
BOTTOM
Peak Reflow Temperature (Cel) :
NOT SPECIFIED
Supplier Device Package :
TO-3
FET Type :
N-Channel
FET Technology :
METAL-OXIDE SEMICONDUCTOR
Max Power Dissipation :
150 W
Gate Charge (Qg) (Max) @ Vgs :
120 nC @ 10 V
JEDEC-95 Code :
TO-3
Weight :
72.574779 g
Drain to Source Resistance :
55 mΩ
Terminal Form :
PIN/PEG
Case Connection :
DRAIN
Polarity/Channel Type :
N-Channel
Turn-Off Delay Time :
125 ns
Number of Pins :
2
Drain-Source On-Volt :
100(V)
Vgs (Max) :
±20V
Manufacturer :
NTE Electronics
Width :
22.1996 mm
Polarity :
N
Pulsed Drain Current-Max (IDM) :
160 A
Continuous Drain Current :
40(A)
Length :
152.4 mm
Surface Mount :
No
Product Status :
Active
Operating Temperature Classification :
Military
Min Operating Temperature :
-55 °C
Drain Current-Max (Abs) (ID) :
32 A
Pin Count :
2 +Tab
Technology :
MOSFET (Metal Oxide)
Operating Temperature :
-55°C ~ 150°C (TJ)
DS Breakdown Voltage-Min :
100 V
Operating Temp Range :
-55C to 150C
Package :
Bag
Channel Mode :
Enhancement
Series :
-
Element Configuration :
Single
Gate to Source Voltage (Vgs) :
20 V
Power Dissipation (Max) :
150W (Tc)
Number of Terminals :
2
Mount :
Through Hole
Nominal Vgs :
4 V
Height :
8.89 mm
Package / Case :
TO-204AA, TO-3
Datasheets
NTE2392
Introducing Transistors - FETs, MOSFETs - Single NTE Electronics, Inc. NTE2392 from Chip IC,where excellence meets affordability. This product stands out with its Type:Power MOSFET, Mounting Type:Through Hole, Number of Pins:2, Operating Temperature:-55°C ~ 150°C (TJ), Package / Case:TO-204AA, TO-3, NTE2392 pinout, NTE2392 datasheet PDF, NTE2392 amp .Beyond Transistors - FETs, MOSFETs - Single NTE Electronics, Inc. NTE2392 ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

NTE Electronics, Inc. NTE2392


MOSFET (Metal Oxide) N-Channel 55mOhm @ 20A, 10V ±20V 3000 pF @ 25 V 120 nC @ 10 V 100 V TO-204AA, TO-3

NTE2392 Overview


A device's maximum input capacitance is 3000 pF @ 25 V, but its input capacitance parameter, CI, is measured as the capacitance between the input terminals of the device with either input grounded.Its continuous drain current is 40 A for this device. Drain current refers to the capacity of the device to conduct continuous current.Single MOSFETs transistor is the voltage at which VDS flows at a specified ID value, wSingle MOSFETs transistorh VGS=100 V, and this device has a drain-to-source breakdown voltage of 100 V voltage.Its drain current is 32 A, and it is the maximum continuous current the device can conduct.A device's turn-off delay time is the amount of time it takes to charge its input capacitance before drain current conduction can begin, which is 125 ns.Its maximum pulsed drain current is 160 A, which is also its maximum rating peak drainage current.The Drain-to-Source Resistance (DTS) of a MOSFET is 55 mΩ when a specific gate-to-source voltage (VGS) is applied to bias it into the on state.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 20 V.An electrical device's threshold voltage specifies when any of its operations will begin, and this transistor has a threshold voltage of 4 V.For normal operation, maintain the DS breakdown voltage above 100 V.To operate this transistor, you need to apply a 100 V drain to source voltage (Vdss).

NTE2392 Features


a continuous drain current (ID) of 40 A
a drain-to-source breakdown voltage of 100 V voltage
the turn-off delay time is 125 ns
based on its rated peak drain current 160 A.
single MOSFETs transistor is 55 mΩ
a threshold voltage of 4 V
a 100 V drain to source voltage (Vdss)


NTE2392 Applications


There are a lot of NTE Electronics, Inc.
NTE2392 applications of single MOSFETs transistors.


  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
  • Telecom 1 Sever Power Supplies
  • Industrial Power Supplies
  • PFC stages, hard switching PWM stages and resonant switching
  • PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
  • Lighting, Server, Telecom and UPS.
  • DC-to-DC converters
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