NTE2392
- Mfr.Part #
- NTE2392
- Manufacturer
- NTE Electronics, Inc.
- Package / Case
- TO-204AA, TO-3
- Datasheet
- Download
- Description
- MOSFET N-CHANNEL 100V 40A TO3
- Stock
- 869
- In Stock :
- 869
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- Manufacturer :
- NTE Electronics, Inc.
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Package Type :
- TO-3
- FET Feature :
- -
- Max Operating Temperature :
- 150 °C
- Type :
- Power MOSFET
- Qualification Status :
- Not Qualified
- Transistor Application :
- SWITCHING
- RoHS :
- Non-Compliant
- Vgs(th) (Max) @ Id :
- 4V @ 250µA
- Operating Mode :
- ENHANCEMENT MODE
- Drain to Source Voltage (Vdss) :
- 100 V
- Current - Continuous Drain (Id) @ 25°C :
- 40A (Tc)
- Rad Hardened :
- No
- Rds On (Max) @ Id, Vgs :
- 55mOhm @ 20A, 10V
- Gate-Source Voltage (Max) :
- ±20(V)
- Continuous Drain Current (ID) :
- 40 A
- Input Capacitance (Ciss) (Max) @ Vds :
- 3000 pF @ 25 V
- Mounting :
- Through Hole
- Package Shape :
- Round
- Drive Voltage (Max Rds On, Min Rds On) :
- 10V
- Turn-On Delay Time :
- 35 ns
- JESD-30 Code :
- O-MBFM-P2
- Reach Compliance Code :
- Unknown
- REACH SVHC :
- Unknown
- Number of Elements :
- 1
- Drain-source On Resistance-Max :
- 0.055 Ω
- Subcategory :
- FET General Purpose Power
- Transistor Element Material :
- SILICON
- Power Dissipation :
- 150 W
- Power Dissipation Ambient-Max :
- 150 W
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- Power Dissipation-Max (Abs) :
- 125 W
- Threshold Voltage :
- 4 V
- ECCN Code :
- EAR99
- Drain to Source Breakdown Voltage :
- 100 V
- Mounting Type :
- Through Hole
- Terminal Position :
- BOTTOM
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Supplier Device Package :
- TO-3
- FET Type :
- N-Channel
- FET Technology :
- METAL-OXIDE SEMICONDUCTOR
- Max Power Dissipation :
- 150 W
- Gate Charge (Qg) (Max) @ Vgs :
- 120 nC @ 10 V
- JEDEC-95 Code :
- TO-3
- Weight :
- 72.574779 g
- Drain to Source Resistance :
- 55 mΩ
- Terminal Form :
- PIN/PEG
- Case Connection :
- DRAIN
- Polarity/Channel Type :
- N-Channel
- Turn-Off Delay Time :
- 125 ns
- Number of Pins :
- 2
- Drain-Source On-Volt :
- 100(V)
- Vgs (Max) :
- ±20V
- Manufacturer :
- NTE Electronics
- Width :
- 22.1996 mm
- Polarity :
- N
- Pulsed Drain Current-Max (IDM) :
- 160 A
- Continuous Drain Current :
- 40(A)
- Length :
- 152.4 mm
- Surface Mount :
- No
- Product Status :
- Active
- Operating Temperature Classification :
- Military
- Min Operating Temperature :
- -55 °C
- Drain Current-Max (Abs) (ID) :
- 32 A
- Pin Count :
- 2 +Tab
- Technology :
- MOSFET (Metal Oxide)
- Operating Temperature :
- -55°C ~ 150°C (TJ)
- DS Breakdown Voltage-Min :
- 100 V
- Operating Temp Range :
- -55C to 150C
- Package :
- Bag
- Channel Mode :
- Enhancement
- Series :
- -
- Element Configuration :
- Single
- Gate to Source Voltage (Vgs) :
- 20 V
- Power Dissipation (Max) :
- 150W (Tc)
- Number of Terminals :
- 2
- Mount :
- Through Hole
- Nominal Vgs :
- 4 V
- Height :
- 8.89 mm
- Package / Case :
- TO-204AA, TO-3
- Datasheets
- NTE2392

MOSFET (Metal Oxide) N-Channel 55mOhm @ 20A, 10V ±20V 3000 pF @ 25 V 120 nC @ 10 V 100 V TO-204AA, TO-3
NTE2392 Overview
A device's maximum input capacitance is 3000 pF @ 25 V, but its input capacitance parameter, CI, is measured as the capacitance between the input terminals of the device with either input grounded.Its continuous drain current is 40 A for this device. Drain current refers to the capacity of the device to conduct continuous current.Single MOSFETs transistor is the voltage at which VDS flows at a specified ID value, wSingle MOSFETs transistorh VGS=100 V, and this device has a drain-to-source breakdown voltage of 100 V voltage.Its drain current is 32 A, and it is the maximum continuous current the device can conduct.A device's turn-off delay time is the amount of time it takes to charge its input capacitance before drain current conduction can begin, which is 125 ns.Its maximum pulsed drain current is 160 A, which is also its maximum rating peak drainage current.The Drain-to-Source Resistance (DTS) of a MOSFET is 55 mΩ when a specific gate-to-source voltage (VGS) is applied to bias it into the on state.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 20 V.An electrical device's threshold voltage specifies when any of its operations will begin, and this transistor has a threshold voltage of 4 V.For normal operation, maintain the DS breakdown voltage above 100 V.To operate this transistor, you need to apply a 100 V drain to source voltage (Vdss).
NTE2392 Features
a continuous drain current (ID) of 40 A
a drain-to-source breakdown voltage of 100 V voltage
the turn-off delay time is 125 ns
based on its rated peak drain current 160 A.
single MOSFETs transistor is 55 mΩ
a threshold voltage of 4 V
a 100 V drain to source voltage (Vdss)
NTE2392 Applications
There are a lot of NTE Electronics, Inc.
NTE2392 applications of single MOSFETs transistors.
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
- PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
- Lighting, Server, Telecom and UPS.
- DC-to-DC converters
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