NTE2389

Manufacturer :

NTE Electronics, Inc.

Product Category :

Transistors - FETs, MOSFETs - Single

Package :

Bag

Configuration :

SINGLE WITH BUILT-IN DIODE

Terminal Position :

Single

Power Dissipation (Max) :

125W (Ta)

Polarity/Channel Type :

N-Channel

FET Type :

N-Channel

Transistor Application :

SWITCHING

Current - Continuous Drain (Id) @ 25°C :

35A (Ta)

Vgs(th) (Max) @ Id :

4V @ 1mA

Input Capacitance (Ciss) (Max) @ Vds :

2000 pF @ 25 V

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Technology :

MOSFET (Metal Oxide)

Reach Compliance Code :

Unknown

Package Shape :

RECTANGULAR

Pulsed Drain Current-Max (IDM) :

152 A

Case Connection :

DRAIN

Number of Elements :

1

JESD-30 Code :

R-PSFM-T3

DS Breakdown Voltage-Min :

60 V

Mounting Type :

Through Hole

FET Feature :

-

Manufacturer :

NTE Electronics

Number of Terminals :

3

Qualification Status :

Not Qualified

Drive Voltage (Max Rds On, Min Rds On) :

10V

ECCN Code :

EAR99

Package / Case :

TO-220-3

Drain-source On Resistance-Max :

0.045 Ω

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Vgs (Max) :

30V

Rds On (Max) @ Id, Vgs :

45mOhm @ 20A, 10V

Supplier Device Package :

TO-220

Series :

-

Drain to Source Voltage (Vdss) :

60 V

Surface Mount :

No

Transistor Element Material :

SILICON

Terminal Form :

THROUGH-HOLE

Product Status :

Active

Operating Mode :

ENHANCEMENT MODE

Operating Temperature :

175°C (TJ)