NTE2388

Manufacturer :

NTE Electronics, Inc.

Product Category :

Transistors - FETs, MOSFETs - Single

Power Dissipation (Max) :

125W (Tc)

Number of Terminals :

3

Terminal Form :

THROUGH-HOLE

Package / Case :

TO-220-3

Terminal Position :

Single

Case Connection :

DRAIN

Number of Elements :

1

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Operating Mode :

ENHANCEMENT MODE

Supplier Device Package :

TO-220

Series :

-

Package Shape :

RECTANGULAR

Qualification Status :

Not Qualified

Drain Current-Max (Abs) (ID) :

18 A

Mounting Type :

Through Hole

Vgs(th) (Max) @ Id :

4V @ 250µA

Transistor Element Material :

SILICON

Input Capacitance (Ciss) (Max) @ Vds :

1600 pF @ 25 V

Drain-source On Resistance-Max :

0.18 Ω

FET Type :

N-Channel

Transistor Application :

SWITCHING

Rds On (Max) @ Id, Vgs :

180mOhm @ 10A, 10V

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Operating Temperature :

-55°C ~ 150°C (TJ)

Surface Mount :

No

Polarity/Channel Type :

N-Channel

Current - Continuous Drain (Id) @ 25°C :

18A (Tc)

Power Dissipation-Max (Abs) :

125 W

Configuration :

SINGLE WITH BUILT-IN DIODE

Reach Compliance Code :

Unknown

Drain to Source Voltage (Vdss) :

200 V

Vgs (Max) :

±20V

JESD-30 Code :

R-PSFM-T3

Pulsed Drain Current-Max (IDM) :

72 A

Manufacturer :

NTE Electronics

FET Feature :

-

ECCN Code :

EAR99

Power Dissipation Ambient-Max :

125 W

Product Status :

Active

Pin Count :

3

JEDEC-95 Code :

TO-220AB

Package :

Bag

Gate Charge (Qg) (Max) @ Vgs :

60 nC @ 10 V

Drive Voltage (Max Rds On, Min Rds On) :

10V

Subcategory :

FET General Purpose Power

DS Breakdown Voltage-Min :

200 V