NTE2386

Manufacturer :

NTE Electronics, Inc.

Product Category :

Transistors - FETs, MOSFETs - Single

Pin Count :

2

JESD-30 Code :

O-MBFM-P2

Power Dissipation (Max) :

125W (Tc)

Package :

Bag

FET Type :

N-Channel

Subcategory :

FET General Purpose Power

JEDEC-95 Code :

TO-3

Pulsed Drain Current-Max (IDM) :

25 A

Drive Voltage (Max Rds On, Min Rds On) :

10V

Supplier Device Package :

TO-3

Power Dissipation Ambient-Max :

150 W

Operating Temperature :

-55°C ~ 150°C (TJ)

Vgs(th) (Max) @ Id :

4V @ 250µA

Product Status :

Active

Case Connection :

DRAIN

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Drain to Source Voltage (Vdss) :

600 V

Rds On (Max) @ Id, Vgs :

1.2Ohm @ 3.4A, 10V

Manufacturer :

NTE Electronics

Vgs (Max) :

±20V

Number of Terminals :

2

Reach Compliance Code :

Unknown

Mounting Type :

Through Hole

Surface Mount :

No

Configuration :

SINGLE WITH BUILT-IN DIODE

FET Feature :

-

Avalanche Energy Rating (Eas) :

670 mJ

Polarity/Channel Type :

N-Channel

Terminal Position :

BOTTOM

Gate Charge (Qg) (Max) @ Vgs :

80 nC @ 10 V

DS Breakdown Voltage-Min :

600 V

Terminal Form :

PIN/PEG

Input Capacitance (Ciss) (Max) @ Vds :

1300 pF @ 25 V

Power Dissipation-Max (Abs) :

150 W

Package / Case :

TO-204AA, TO-3

Number of Elements :

1

Current - Continuous Drain (Id) @ 25°C :

6.2A (Tc)

Operating Mode :

ENHANCEMENT MODE

Qualification Status :

Not Qualified

Technology :

MOSFET (Metal Oxide)

Transistor Application :

SWITCHING

Drain Current-Max (Abs) (ID) :

6 A

Drain-source On Resistance-Max :

1.2 Ω

Package Shape :

Round

Additional Feature :

AVALANCHE RATED

Transistor Element Material :

SILICON

Series :

-