NTE2380

Manufacturer :

NTE Electronics, Inc.

Product Category :

Transistors - FETs, MOSFETs - Single

Supplier Device Package :

TO-220

Polarity/Channel Type :

N-Channel

Configuration :

SINGLE WITH BUILT-IN DIODE

Drain to Source Resistance :

3 Ω

Vgs (Max) :

±20V

JEDEC-95 Code :

TO-220AB

Height :

6.35 mm

RoHS :

Compliant

Drain Current-Max (Abs) (ID) :

2 A

Transistor Element Material :

SILICON

REACH SVHC :

No SVHC

Reach Compliance Code :

Unknown

Technology :

MOSFET (Metal Oxide)

DS Breakdown Voltage-Min :

500 V

Power Dissipation-Max (Abs) :

75 W

Weight :

68.038855 g

Mounting Type :

Through Hole

Current - Continuous Drain (Id) @ 25°C :

2.5A (Tc)

Series :

-

HTS Code :

8541.29.00.95

Polarity :

N

Max Power Dissipation :

40 W

Input Capacitance (Ciss) (Max) @ Vds :

400 pF @ 25 V

Power Dissipation Ambient-Max :

75 W

Qualification Status :

Not Qualified

Mount :

Through Hole

Pin Count :

3 +Tab

Power Dissipation :

40(W)

Package / Case :

TO-220-3

Nominal Vgs :

4 V

Width :

38.1 mm

Number of Elements :

1

JESD-30 Code :

R-PSFM-T3

Terminal Form :

THROUGH-HOLE

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Operating Temp Range :

-55C to 150C

Drain to Source Breakdown Voltage :

500 V

Gate to Source Voltage (Vgs) :

20 V

Rds On (Max) @ Id, Vgs :

3Ohm @ 1A, 10V

Mounting :

Through Hole

Continuous Drain Current :

2.5(A)

FET Type :

N-Channel

Drain-source On Resistance-Max :

3 Ω

Subcategory :

FET General Purpose Power

Surface Mount :

No

ECCN Code :

EAR99

Drain-Source On-Volt :

500(V)

Package :

Bag

Power Dissipation (Max) :

40W (Tc)

FET Feature :

-

Case Connection :

DRAIN

Continuous Drain Current (ID) :

2.5 A

Vgs(th) (Max) @ Id :

4V @ 250µA

Drain to Source Voltage (Vdss) :

500 V

Transistor Application :

SWITCHING

Number of Pins :

3

Operating Temperature Classification :

Military

Rad Hardened :

No

Terminal Position :

Single

Length :

133.35 mm

Number of Terminals :

3

Package Type :

TO-220

Min Operating Temperature :

-55 °C

Pulsed Drain Current-Max (IDM) :

10 A

Type :

Power MOSFET

Product Status :

Active

Drive Voltage (Max Rds On, Min Rds On) :

10V

Manufacturer :

NTE Electronics

Max Operating Temperature :

150 °C

Gate-Source Voltage (Max) :

±20(V)

Operating Temperature :

-55°C ~ 150°C

Gate Charge (Qg) (Max) @ Vgs :

15 nC @ 10 V

Operating Mode :

ENHANCEMENT MODE

Threshold Voltage :

4 V

Package Shape :

RECTANGULAR

Channel Mode :

Enhancement

FET Technology :

METAL-OXIDE SEMICONDUCTOR