NTE2374

Manufacturer :

NTE Electronics, Inc.

Product Category :

Transistors - FETs, MOSFETs - Single

Number of Elements :

1

Type :

Power MOSFET

Pin Count :

3 +Tab

Series :

-

Mounting :

Through Hole

Rad Hardened :

No

Pulsed Drain Current-Max (IDM) :

72 A

Configuration :

SINGLE WITH BUILT-IN DIODE

Terminal Position :

Single

Current - Continuous Drain (Id) @ 25°C :

18A (Tc)

Package / Case :

TO-220-3

Gate Charge (Qg) (Max) @ Vgs :

70 nC @ 10 V

Drain to Source Voltage (Vdss) :

200 V

Surface Mount :

No

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Operating Temperature :

-55°C ~ 150°C (TJ)

Mounting Type :

Through Hole

Operating Temperature Classification :

Military

JESD-30 Code :

R-PSFM-T3

ECCN Code :

EAR99

Polarity :

N

Terminal Form :

THROUGH-HOLE

Operating Temp Range :

-55C to 150C

Polarity/Channel Type :

N-Channel

DS Breakdown Voltage-Min :

200 V

Product Status :

Active

Drain-source On Resistance-Max :

0.18 Ω

Case Connection :

DRAIN

Package Type :

TO-220

Package Shape :

RECTANGULAR

Input Capacitance (Ciss) (Max) @ Vds :

1300 pF @ 25 V

Power Dissipation :

125(W)

Continuous Drain Current :

18(A)

Gate-Source Voltage (Max) :

±20(V)

Power Dissipation (Max) :

125W (Tc)

Supplier Device Package :

TO-220

Number of Terminals :

3

Manufacturer :

NTE Electronics

Vgs (Max) :

±20V

Reach Compliance Code :

Unknown

Transistor Element Material :

SILICON

Rds On (Max) @ Id, Vgs :

180mOhm @ 31A, 10V

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Avalanche Energy Rating (Eas) :

580 mJ

Qualification Status :

Not Qualified

Drain-Source On-Volt :

200(V)

Operating Mode :

ENHANCEMENT MODE

Transistor Application :

SWITCHING

Drive Voltage (Max Rds On, Min Rds On) :

10V

FET Type :

N-Channel

Vgs(th) (Max) @ Id :

4V @ 250µA

Package :

Bag

FET Feature :

-

Channel Mode :

Enhancement