NTB45N06G

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Mount :

Surface Mount

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Terminal Form :

Gull wing

Transistor Application :

SWITCHING

Rds On (Max) @ Id, Vgs :

26m Ω @ 22.5A, 10V

Fall Time (Typ) :

106 ns

Drain to Source Breakdown Voltage :

60V

Pbfree Code :

yes

Rise Time :

101ns

Terminal Finish :

Tin (Sn)

Pin Count :

3

Packaging :

Tube

JESD-30 Code :

R-PSSO-G2

Number of Terminations :

2

Input Capacitance (Ciss) (Max) @ Vds :

1725pF @ 25V

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Qualification Status :

Not Qualified

JESD-609 Code :

e3

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Operating Temperature :

-55°C~175°C TJ

Number of Pins :

3

Current Rating :

45A

Continuous Drain Current (ID) :

45A

Lifecycle Status :

LAST SHIPMENTS (Last Updated: 3 days ago)

Published :

2005

Mounting Type :

Surface Mount

RoHS Status :

RoHS Compliant

Gate to Source Voltage (Vgs) :

20V

Turn-Off Delay Time :

33 ns

Power Dissipation-Max :

2.4W Ta 125W Tj

Gate Charge (Qg) (Max) @ Vgs :

46nC @ 10V

Vgs(th) (Max) @ Id :

4V @ 250µA

Number of Elements :

1

Vgs (Max) :

±20V

Element Configuration :

Single

Case Connection :

DRAIN

Voltage - Rated DC :

60V

Drain-source On Resistance-Max :

0.026ohm

Drive Voltage (Max Rds On,Min Rds On) :

10V

Current - Continuous Drain (Id) @ 25°C :

45A Ta

Lead Free :

Lead Free

Power Dissipation :

125W

FET Type :

N-Channel

Transistor Element Material :

SILICON

Operating Mode :

ENHANCEMENT MODE

Avalanche Energy Rating (Eas) :

240 mJ