NTB4302G
- Mfr.Part #
- NTB4302G
- Manufacturer
- onsemi
- Package / Case
- TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- Datasheet
- Download
- Description
- MOSFET N-CH 30V 74A D2PAK
- Stock
- 18,500
- In Stock :
- 18,500
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Mounting Type :
- Surface Mount
- Terminal Position :
- Single
- Package / Case :
- TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- FET Type :
- N-Channel
- DS Breakdown Voltage-Min :
- 30V
- Surface Mount :
- yes
- Avalanche Energy Rating (Eas) :
- 722 mJ
- Input Capacitance (Ciss) (Max) @ Vds :
- 2.4pF @ 24V
- Vgs (Max) :
- ±20V
- Pbfree Code :
- No
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Drive Voltage (Max Rds On,Min Rds On) :
- 4.5V 10V
- Case Connection :
- DRAIN
- Number of Terminations :
- 2
- Pulsed Drain Current-Max (IDM) :
- 175A
- Pin Count :
- 3
- Current - Continuous Drain (Id) @ 25°C :
- 74A Tc
- Operating Mode :
- ENHANCEMENT MODE
- Transistor Element Material :
- SILICON
- Drain Current-Max (Abs) (ID) :
- 74A
- Peak Reflow Temperature (Cel) :
- 260
- Drain-source On Resistance-Max :
- 0.0093Ohm
- Power Dissipation-Max :
- 80W Tc
- Drain to Source Voltage (Vdss) :
- 30V
- Transistor Application :
- SWITCHING
- JESD-30 Code :
- R-PSSO-G2
- Reach Compliance Code :
- Unknown
- Terminal Finish :
- MATTE TIN
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- RoHS Status :
- ROHS3 Compliant
- JESD-609 Code :
- e3
- Operating Temperature :
- -55°C~150°C TJ
- Number of Elements :
- 1
- Packaging :
- Tube
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Rds On (Max) @ Id, Vgs :
- 9.3m Ω @ 37A, 10V
- Gate Charge (Qg) (Max) @ Vgs :
- 28nC @ 4.5V
- Vgs(th) (Max) @ Id :
- 3V @ 250µA
- Qualification Status :
- COMMERCIAL
- Terminal Form :
- Gull wing
- Datasheets
- NTB4302G

N-Channel Tube 9.3m Ω @ 37A, 10V ±20V 2.4pF @ 24V 28nC @ 4.5V 30V TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
NTB4302G Overview
As a result of avalanche breakdown, energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating is 722 mJ.CI refers to the capacitance between two input terminals on an op amp with either input grounded, and this device's maximum input capacitance is 2.4pF @ 24V.There is no drain current on this device since the maximum continuous current it can conduct is 74A.There is a peak drain current of 175A, its maximum pulsed drain current.In order for DS breakdown voltage to remain above 30V, it should remain above the 30V level.The transistor must receive a 30V drain to source voltage (Vdss) in order to function.In addition to reducing power consumption, this device uses drive voltage (4.5V 10V).
NTB4302G Features
the avalanche energy rating (Eas) is 722 mJ
based on its rated peak drain current 175A.
a 30V drain to source voltage (Vdss)
NTB4302G Applications
There are a lot of Rochester Electronics, LLC
NTB4302G applications of single MOSFETs transistors.
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
- PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
- Lighting, Server, Telecom and UPS.
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