NTB4302
- Mfr.Part #
- NTB4302
- Manufacturer
- onsemi
- Package / Case
- TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- Datasheet
- Download
- Description
- MOSFET N-CH 30V 74A D2PAK
- Stock
- 1,203
- In Stock :
- 1,203
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Mounting Type :
- Surface Mount
- Vgs (Max) :
- ±20V
- Voltage - Rated DC :
- 30V
- Pin Count :
- 3
- Continuous Drain Current (ID) :
- 74A
- Drain-source On Resistance-Max :
- 0.0093Ohm
- JESD-609 Code :
- e0
- Turn-Off Delay Time :
- 32 ns
- Transistor Application :
- SWITCHING
- Mount :
- Surface Mount
- Case Connection :
- DRAIN
- Packaging :
- Tube
- Operating Mode :
- ENHANCEMENT MODE
- Gate Charge (Qg) (Max) @ Vgs :
- 28nC @ 4.5V
- Number of Elements :
- 1
- Input Capacitance (Ciss) (Max) @ Vds :
- 2400pF @ 24V
- Avalanche Energy Rating (Eas) :
- 722 mJ
- Lead Free :
- Contains Lead
- Qualification Status :
- Not Qualified
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Current Rating :
- 74A
- Pulsed Drain Current-Max (IDM) :
- 175A
- Power Dissipation :
- 80W
- Fall Time (Typ) :
- 30 ns
- Vgs(th) (Max) @ Id :
- 3V @ 250µA
- Gate to Source Voltage (Vgs) :
- 20V
- FET Type :
- N-Channel
- Terminal Form :
- Gull wing
- Transistor Element Material :
- SILICON
- Drive Voltage (Max Rds On,Min Rds On) :
- 4.5V 10V
- Reach Compliance Code :
- not_compliant
- Drain to Source Breakdown Voltage :
- 30V
- Element Configuration :
- Single
- Rise Time :
- 70ns
- Peak Reflow Temperature (Cel) :
- 235
- Power Dissipation-Max :
- 80W Tc
- Current - Continuous Drain (Id) @ 25°C :
- 74A Tc
- Operating Temperature :
- -55°C~150°C TJ
- Number of Terminations :
- 2
- Terminal Finish :
- Tin/Lead (Sn/Pb)
- Package / Case :
- TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- ECCN Code :
- EAR99
- JESD-30 Code :
- R-PSSO-G2
- RoHS Status :
- Non-RoHS Compliant
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Published :
- 2005
- Rds On (Max) @ Id, Vgs :
- 9.3m Ω @ 37A, 10V
- Datasheets
- NTB4302

N-Channel Tube 9.3m Ω @ 37A, 10V ±20V 2400pF @ 24V 28nC @ 4.5V TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
NTB4302 Overview
This type of breakdown is known as "avalanche breakdown", and the energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating (Eas) is 722 mJ.The maximum input capacitance of this device is 2400pF @ 24V, because the input capacitance of an op amp is defined as the difference between the input terminals with one input grounded.Continuous drain current (ID) is the maximum continuous current (ID) the device can conduct, and it is 74A.When VGS=30V, and ID flows to VDS at 30VVDS, the drain-source breakdown voltage is 30V in this device.Before drain current conduction can begin, the device's turn-off delay time must be charged up to full capacitance. This value is 32 ns.There is no pulsed drain current maximum for this device based on its rated peak drain current 175A.Single MOSFETs transistor is the voltage across the gate-source terminal of a transistor that determines the gate-source voltage, VGS.Using drive voltage (4.5V 10V), this device helps reduce its power consumption.
NTB4302 Features
the avalanche energy rating (Eas) is 722 mJ
a continuous drain current (ID) of 74A
a drain-to-source breakdown voltage of 30V voltage
the turn-off delay time is 32 ns
based on its rated peak drain current 175A.
NTB4302 Applications
There are a lot of ON Semiconductor
NTB4302 applications of single MOSFETs transistors.
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
- PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
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